MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSZ15DC02KD H


MOSFET SMALL SIGNAL+P-CH
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Infineon 0
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AUD 1.1314
Multiples of: 1

5.1 A , 3.2 A20 V41 mOhms , 97 mOhmsN - Channel, P - Channel 800 mV , 1.4 V- 55 C+ 175 C2.5 WSmd/SmtTSDSON - 8Cut TapeSi2 Channel12 V2.8 nC , - 4.5 nCEnhancement Optimos
IPG20N06S415AATMA1


MOSFET N-CHANNEL_55/60V
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AUD 1.1315
Multiples of: 590

   N - Channel     Smd/SmtTDSON - 8Cut TapeSi1 Channel   Aec - Q101 
TK290A65Y,S4X


Power MOSFET N-Channel 650V 11.5A 3-Pin SC-67 Tube
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Toshiba 0
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AUD 1.1318
Multiples of: 1

11.5 A650 V230 mOhmsN - Channel 3 V-+ 150 C35 WThrough HoleTO - 220SIS - 3TubeSi1 Channel30 V25 nCEnhancement Dtmosv
PSMN017-80BS-VB


80V 120A 6m@10V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 0
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AUD 1.1321
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FDB045AN08A0-VB


80V 120A 6m@10V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 0
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AUD 1.1321
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VS4602AP


MOSFET N Trench 40V 220A (Tc) 3.9V @ 250uA 2.5 mΩ @ 30A,10V PDFN5*6 RoHS
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Vanguard 0
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AUD 1.1323
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SQJ262EP-T1_GE3


MOSFET Dual 60V Vds Asymtrc AEC-Q101 Qualified
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Vishay 0
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AUD 1.1325
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15 A , 40 A60 V29.5 mOhms , 12.6 mOhmsN - Channel 1.5 V- 55 C+ 175 C27 w , 48 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi2 Channel10 V6.5 nC , 14.5 nCEnhancementAec - Q101Trenchfet
IRF6201PBF


MOSFET 20V 1 N-CH HEXFET 2.45mOhms 130nC
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Infineon 0
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AUD 1.1326
Multiples of: 1

27 A20 V2.45 mOhmsn - channel 1.1 V- 55 C+ 150 C2.5 Wsmd/smtSOIC - 8Tubesi1 channel12 V130 nCenhancement  
TPCA8128


MOSFET, P CH, 30V, 34A, SOP8
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Toshiba 0
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AUD 1.1327
Multiples of: 1

   p channel       Cut Tape       
STS4NF100


MOSFET N-Ch 100 Volt 4 Amp
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STMicroelectronics 0
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AUD 1.1329
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4 A100 V65 mOhmsn - channel20 V - 55 C+ 150 C2.5 Wsmd/smtSO - 8Reel    enhancement  
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