MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HY3306B


MOSFET N Trench 60V 130A (Tc) 4V @ 250uA 6.8 mΩ @ 65A,10V TO-263-2 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HuaYi 0
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AUD 1.0216
Multiples of: 1

                   
NDT454P


Transistor: P-MOSFET; unipolar; -30V; -5.9A; 3W; SOT223
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ON Semiconductor 0
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AUD 1.0216
Multiples of: 21

                   
IRF840BPBF-VB


500V 13A 660m@10V 1PCSNChannel TO-220 MOSFETs ROHS
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VBsemi Elec 0
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AUD 1.0218
Multiples of: 1

                   
DMG4N65CTI


Diodes Incorporated MOSFET N-CH MOSFET 650V 4A
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Diodes Incorporated 0
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AUD 1.022
Multiples of: 1

4 A650 V3 Ohmsn - channel 3 V- 55 C+ 150 C8.35 Wthrough holeTO - 220AB - 3Tubesi1 channel30 V13.5 nCenhancement  
TPH3R70APL,L1Q


MOSFET X35 Pb-F POWER MOSFET TRANSISTOR TSON-ADV PD=170W F=1MHZ
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba 0
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AUD 1.0221
Multiples of: 5000

150 A100 V3.7 mOhmsN - Channel 1.5 V- 55 C+ 175 C170 WSMD/SMTSOP - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V67 nCEnhancement U - MOSIX - H
SM4307PSKPC


MOSFET PowerPAK SO-8 RoHS
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VBsemi Elec 0
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AUD 1.0222
Multiples of: 1

                   
IPD30N06S223ATMA2


MOSFET N-CHANNEL_55/60V
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Infineon 0
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AUD 1.0223
Multiples of: 653

30 A55 V23 mOhmsN - Channel 3 V- 55 C+ 175 C100 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V32 nCEnhancementAEC - Q101 
BSZ033NE2LS5ATMA1


MOSFET LV POWER MOS
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Infineon 0
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AUD 1.0225
Multiples of: 1

40 A25 V3.3 mOhmsN - Channel 1.2 V- 55 C+ 150 C3 WSmd/SmtPG - TSDSON - 8Cut TapeSi1 Channel10 V13.6 nCEnhancement Optimos
SVD5803NT4G


MOSFET NFET DPAK 40V 85A 5.7MOHM
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ON Semiconductor 0
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AUD 1.0227
Multiples of: 2500

           Cut TapeSi      
BSC252N10NSFGXT


MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 0.979
Multiples of: 5000

40 A100 V19.5 mOhmsN - Channel 2 V- 55 C+ 150 C78 WSmd/SmtTDSON - 8Cut TapeSi1 Channel20 V17 nCEnhancement  
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First...46014602460346044605...

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