MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFB4510PBF-VB


TO-220AB MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

VBsemi Elec 0
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AUD 1.0181

Multiples of: 1

                   
IRL530NSTRRPBF


International Rectifier MOSFET 100V 1 N-CH HEXFET PWR MOSFET 100mOhms
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Infineon 0
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AUD 1.0186

Multiples of: 1

17 A100 V150 mOhmsN - Channel20 V1 V To 2 V- 55 C+ 175 C3.8 WSmd/SmtD - PAK - 3ReelSi1 Channel20 V22.7 nCEnhancement  
STH15810-2


MOSFET N Trench 100V 110A (Tc) 4.5V @ 250uA 3.9 mΩ @ 55A,10V H2PAK-2 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
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AUD 1.0186

Multiples of: 1000

                   
SQJ185ELP-T1_GE3


MOSFETs P-CHANNEL 80-V (D-S) 175C MOSFET
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Vishay 0
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AUD 1.0189

Multiples of: 1

62 A80 V19.5 mOhmsP - Channel 2.5 V- 55 C+ 175 C145 WSMD/SMTPOWERPAK SO - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V46 nCEnhancement  
TPA60R360MFD


600V 11A 330mO@10V,5.5A 31W N Channel TO-220F-3 MOSFETs ROHS
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UNIGROUP 0
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AUD 1.019

Multiples of: 1

                   
NTD4805N-1G


MOSFET NFET 30V 88A 5MOHM
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ON Semiconductor 0
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AUD 1.0192

Multiples of: 1

                   
NTD4970NT4G


MOSFET NFET DPAK 30V 38A 11MOHM
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 1.0192

Multiples of: 1

                   
EFC4618R-TR


MOSFET SWITCHING DEVICE
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ON Semiconductor 0
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AUD 1.0192

Multiples of: 1

                   
SUM90330E-GE3


MOSFET 200V Vds 20V Vgs TO-263
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Vishay 0
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AUD 1.0193

Multiples of: 1

35.1 A200 V31.2 mOhmsN - Channel 2 V- 55 C+ 175 C125 WSmd/SmtTO - 263 - 3 Si1 Channel20 V32 nCEnhancement  
IRF1018ESPBF


Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; D2PAK
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Infineon 0
6 to 16 Weeks Calender.png

AUD 1.0195

Multiples of: 1

79 A60 V7.1 mOhmsN - Channel    110 WSmd/SmtD2PAKTubeSi1 Channel20 V46 nC   
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