MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPP60R750E6


MOSFET N-Ch 650V 5.7A TO220-3 CoolMOS E6
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 1.0146

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5.7 A600 V680 mOhmsn - channel  - 55 C+ 150 C48 Wthrough holeTO - 220Tubesi1 channel20 V   coolmos
FQP2N60C


Transistor: N-MOSFET; unipolar; 600V; 1.35A; 54W; TO220AB
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 1.0149

Multiples of: 1

   N Channel               
WGA9N90


TO-3P MOSFETs ROHS
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Wild Goose 0
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AUD 1.015

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IRLL014TRPBF-BE3


MOSFET 60V N-CH MOSFET
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Vishay 0
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AUD 1.0151

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2.7 A60 V200 mOhmsN - Channel 2 V- 55 C+ 150 C3.1 WSMD/SMTSOT - 223 - 4Cut Tape , ReelSi1 Channel- 10 V , + 10 V8.4 nCEnhancement  
IPB034N03L G


MOSFET N-CH 30V 80A 3.4mOhms
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Infineon 0
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AUD 1.0153

Multiples of: 1

80 A30 V3.4 mOhmsn - channel  - 55 C+ 175 C94 Wsmd/smtTO - 263Reelsi1 channel20 V enhancement optimos
IRF7707GTRPBF


MOSFET MOSFT PCh -20V -7A 14.3mOhm 31nC
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Infineon 0
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AUD 1.0153

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7 A20 V22 mOhmsp - channel 1.2 V + 150 C1.5 Wsmd/smtTSSOP - 8Reelsi1 channel 47 nC   
NCEP60T15G


MOSFET N Trench 60V 150A (Tc) 4V @ 250uA 3.1 mΩ @ 20A,10V DFN 5x6-8L RoHS
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NCE Power 0
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AUD 1.0154

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WMO030N06HG4


Transistor: N-MOSFET; unipolar; TO252
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Wayon 0
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AUD 1.0155

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IRLZ34NSPBF


Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK
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Infineon 0
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AUD 1.0158

Multiples of: 1

30 A55 V60 mOhmsN - Channel 2 V- 55 C+ 175 C68 WSmd/SmtD2PAKTubeSi1 Channel16 V16.7 nCEnhancement  
TK6A60D(STA4,Q,M)


Toshiba MOSFET N-Ch FET 600V 3.0s IDSS 10 uA 1.0 Ohm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba 0
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AUD 1.0159

Multiples of: 1

6 A600 V1.25 Ohmsn - channel30 V4 V- 55 C+ 150 C40 Wthrough holeTO - 220 - 3Tubesi1 channel10 V16 nCenhancement  
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