MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSZ12DN20NS3G


Infineon Technologies MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 0.9481

Multiples of: 1

11.3 A200 V108 mOhmsN - Channel  - 55 C+ 150 C50 WSmd/SmtPG - TDSON - 8ReelSi1 Channel20 V    
IRFZ44NPBF


60V 60A 11mO@10V,60A N Channel TO-220 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.9483

Multiples of: 1

                   
SQJ990EP-T1_GE3


MOSFET Dual N-Ch 100V Vds AEC-Q101 Qualified
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 0.9483

Multiples of: 3000

17 A , 34 A100 V32.5 mOhms , 15.4 mOhmsN - Channel 1.5 V- 55 C+ 175 C27 w , 48 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi2 Channel20 V15 nC , 30 nCEnhancementAec - Q101Trenchfet
SQJ912BEP-T1_GE3


MOSFET Dual N-Ch 40V AEC-Q101 Qualified
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Vishay 0
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AUD 0.9483

Multiples of: 1

30 A40 V9 mOhms , 9 mOhmsN - Channel 1 V- 55 C+ 175 C48 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi2 Channel12 V60 nC , 60 nCEnhancementAec - Q101 
NVTFS5820NLTAG


MOSFET Single N-Channel 60V,29A,11.5mohm
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ON Semiconductor 0
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AUD 0.9485

Multiples of: 1500

29 A60 V11.5 mOhmsn - channel 1.5 V- 55 C+ 175 C21 Wsmd/smtWDFN - 8Reelsi1 channel10 V28 nCenhancementaec - q101 
NVTFS5811NLTWG


ON Semiconductor MOSFET Single N-Channel 40V,40A,6.5mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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AUD 0.9485

Multiples of: 5000

40 A40 V6.7 mOhmsn - channel   + 175 C21 Wsmd/smtWDFN - 8Reelsi1 channel   aec - q101 
NVTFS5820NLTWG


ON Semiconductor MOSFET Single N-Channel 60V,29A,11.5mohm
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AUD 0.9485

Multiples of: 5000

29 A60 V11.5 mOhmsn - channel   + 175 C21 Wsmd/smtWDFN - 8Reelsi1 channel   aec - q101 
CS3205B8


MOSFET N Trench 60V 120A (Tc) 4V @ 250uA 8 mΩ @ 50A,10V TO-220 (TO-220-3) RoHS
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Huajing 0
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AUD 0.9486

Multiples of: 1

                   
IRFBC20PBF


MOSFET N Trench 600V 2.2A 4V @ 250uA 4.4 Ω @ 1.3A,10V TO-220 (TO-220-3) RoHS
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Infineon 0
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AUD 0.9486

Multiples of: 1

           Tube - Packed       
SLF12N60C


MOSFET TO-220F RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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AUD 0.9487

Multiples of: 1

                   
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