MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRL3715ZLPBF


MOSFET MOSFT 20V 50A 11mOhm 7nC Log Lvl
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AUD 0.9448

Multiples of: 1

50 A20 V15.5 mOhmsn - channel    45 Wthrough holeTO - 262Tubesi1 channel20 V7 nC   
HFS12N60S


600V 12A 51W 650mO@10V,6A N Channel TO-220F-3 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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AUD 0.9452

Multiples of: 1

                   
FCAB21520L1


MOSFET Split wide Pad Dual CSP Nch MOSFET
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Panasonic 0
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AUD 0.9452

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35 A12 V3.1 mOhmsN - Channel 900 mV-+ 150 C3.8 WSmd/SmtTcsp1530011 - N1 - 10Cut TapeSi2 Channel8 V38 nC   
IPB80N06S4-07


Infineon Technologies MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS-T2
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AUD 0.9456

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80 A60 V7.1 mOhmsn - channel20 V2 V- 55 C+ 175 C79 Wsmd/smtD2PAK - 3Reelsi1 channel20 V43 nCenhancement optimos
ISZ0804NLSATMA1


100V 11.5mO@20A,10V N Channel TSDSON-8-26 MOSFETs ROHS
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6 to 16 Weeks Calender.png

AUD 0.9457

Multiples of: 1

58 A100 V11.5 mOhmsN - Channel 2.3 V- 55 C+ 150 C60 WSMD/SMT Cut Tape , ReelSi1 Channel- 20 V , + 20 V9.2 nCEnhancement  
IRFU3711ZPBF


MOSFET MOSFT 20V 93A 5.7mOhm 18nC Qg
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Infineon 0
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AUD 0.9457

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93 A20 V7.8 mOhmsn - channel    79 Wthrough holeIPAKTubesi1 channel20 V18 nC   
SL11N65CF


MOSFET N Trench 650V 11.5A (Tc) 4V @ 250uA 360 mΩ @ 7A,10V TO-220F RoHS
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SLKORMICRO 0
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AUD 0.9459

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HYG032N08NS1B


TO-263-2L MOSFETs ROHS
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HuaYi 0
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AUD 0.9459

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AGM401C


40V 220A 1.8m@10V,60A 200W 1.5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS
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AUD 0.9459

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NDB6060L-VB


60V 75A 11m@10V 1PCSNChannel TO-263 MOSFETs ROHS
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AUD 0.9461

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