MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVMFS5C682NLWFAFT1G


MOSFET TRENCH 6 60V NFET
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ON Semiconductor 0
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AUD 0.902
Multiples of: 1

           Cut Tape       
IRFL110TRPBF-BE3


MOSFET 100V N-CH HEXFET
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Vishay 0
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AUD 0.902
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1.5 A100 V540 mOhmsN - Channel 4 V- 55 C+ 150 C3.1 WSMD/SMTSOT - 223 - 4Cut Tape , ReelSi1 Channel- 20 V , + 20 V8.3 nCEnhancement  
STD5N65M6


MOSFET N-channel 650 V, 1.15 Ohm typ 4 A MDmesh M6 Power MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
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AUD 0.9022
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GT060N10M


100V 120A 4.5mO@10V,20A 214W N Channel TO-263-2 MOSFETs ROHS
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GOFORD 0
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AUD 0.9024
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NVD5C454NT4G


MOSFET T6 40V DPAK EXP
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ON Semiconductor 0
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AUD 0.9025
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83 A40 V4.2 mOhmsN - Channel 2 V- 55 C+ 175 C56 WSmd/SmtDPAK - 3Cut TapeSi1 Channel20 V32 nCEnhancementAec - Q101 
BSC014N03MS G


MOSFET OptiMOS 3 M-Series PWR-MOSFET 30V 100A
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Infineon 0
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AUD 0.9025
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30 A30 V1.4 mOhmsn - channel  - 55 C+ 150 C2.5 Wsmd/smtTDSONReelsi1 channel20 V enhancement optimos
IRFR3708PBF


Transistor: N-MOSFET; unipolar; 30V; 61A; 87W; DPAK
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Infineon 0
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AUD 0.9025
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61 A30 V14 mOhmsN - Channel 2 V- 55 C+ 175 C87 WSmd/SmtDPAKTubeSi1 Channel12 V24 nCEnhancement  
CPC5602CTR


SOT-223 MOSFETs ROHS
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Littelfuse 0
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AUD 0.9026
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SVF10N65F-VB


650V 10A 820m@10V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.9028
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IRF7420TRPBF


MOSFET P Trench 12V 11.5A (Tc) 900mV @ 250uA 14 mΩ @ 11.5A,4.5V SOIC-8_150mil RoHS
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Infineon 0
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AUD 0.9028
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11.5 A12 V14 mOhmsP - Channel    2.5 WSmd/SmtSOIC - 8ReelSi1 Channel8 V38 nC   
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