MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TK6A50D(STA4,Q,M)


Transistor: N-MOSFET; unipolar; 500V; 6A; Idm: 24A; 35W; TO220FP
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba 0
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AUD 0.9046
Multiples of: 1

                   
SI4010DY-T1-GE3


Vishay Semiconductors MOSFET N-Channel 30V
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AUD 0.9049
Multiples of: 1

31.3 A30 V3.4 mOhmsn - channel 1 V- 55 C+ 150 C6 Wsmd/smtSO - 8Reel-1 channel- 16 v , + 20 V51 nCenhancement trenchfet
HYG025N06LS2B


60V 145A 2.8mΩ@10V,40A 125W 2.1V@250uA 10pF@25V N Channel 4.381nF@25V 69.8nC@10V -55℃~+175℃@(Tj) TO-263-2L MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HuaYi 0
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AUD 0.9051
Multiples of: 1

                   
NCEP60T12AK


MOSFET N Trench 60V 120A 2.4V @ 250uA 4 mO @ 60A,10V TO-252-2 (DPAK) RoHS
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NCE Power 0
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AUD 0.9055
Multiples of: 1

                   
TK290P60Y,RQ


MOSFET N-Ch DTMOSV 650V 100W 730pF 11.5A
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Toshiba 0
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AUD 0.9055
Multiples of: 1

11.5 A600 V230 mOhmsN - Channel 3 V-+ 150 C100 WSmd/SmtDPAK - 3Cut TapeSi1 Channel30 V25 nCEnhancement Dtmosv
TK560A65Y,S4X


MOSFET N-Ch DTMOSV 650V 30W 380pF 7.0A
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AUD 0.9055
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7 A650 V430 mOhmsN - Channel 3 V-+ 150 C30 WThrough HoleTO - 220SIS - 3TubeSi1 Channel30 V14.5 nCEnhancement Dtmosv
CMD50P06-VB


60V 50A 20m@10V,50A 1PCSPChannel TO-252-2 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.9058
Multiples of: 1

                   
NVMFS6B85NLT3G


MOSFET 100V 30 MOHM T5 SINGLE S0
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ON Semiconductor 0
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AUD 0.9058
Multiples of: 1

         Smd/SmtSO - FL - 8Cut TapeSi    Aec - Q101 
STP6N65M2


STMicroelectronics MOSFET
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STMicroelectronics 0
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AUD 0.9058
Multiples of: 1

4 A650 V1.35 Ohmsn - channel 3 V- 55 C+ 150 C60 Wthrough holeTO - 220 - 3Tubesi1 channel25 V9.8 nC  mdmesh
IRF710STRLPBF


Vishay Semiconductors MOSFET N-Chan 400V 2.0 Amp
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AUD 0.9061
Multiples of: 800

2 A400 V3.6 Ohmsn - channel20 V - 55 C+ 150 C3.1 Wsmd/smtD2PAK - 3Reelsi   enhancement  
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