MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SLF10N60C


MOSFET TO-220F RoHS
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AUD 0.885
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SLF13N50C


MOSFET TO-220F RoHS
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AUD 0.885
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HY15P03C2


MOSFET P Trench 30V 60A (Tc) 3V @ 250uA 6 mΩ @ 20A,10V PDFN5X6-8L RoHS
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AUD 0.885
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AUIRFR3710ZTRR-VB


100V 85A 8.5m@10V 1PCSNChannel TO-252 MOSFETs ROHS
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AUD 0.8852
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2SK2869S-E


2SK2869S-E
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AUD 0.8853
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SIR436DP-T1-GE3


Vishay Semiconductors MOSFET 25V 40A 50W
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AUD 0.8857
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         smd/smtPOWERPAK - SO - 8-si     trenchfet, powerpak
SVS14N60FJD2


TO-220F-3 MOSFETs ROHS
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AUD 0.8858
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SSP65R650S2


650V 7.8A 550mO@10V,3.5A 80W N Channel TO-220 MOSFETs ROHS
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AUD 0.8859
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RQ1A070ZPFRATR


MOSFET, AEC-Q101, P-CH, -12V, TSMT
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AUD 0.8859
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   P Channel               
SISS22LDN-T1-GE3


MOSFET N-CHANNEL 60V PowerPAK 1212-8S
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AUD 0.886
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92.5 A60 V3.65 mOhmsN - Channel 2.5 V- 55 C+ 150 C65.7 WSmd/SmtPOWERPAK SO - 8Cut TapeSi1 Channel10 V17.4 nC , 37.3 nCEnhancement Trenchfet
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