MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RD3T075CNTL1


MOSFET Nch 200V 7.5A TO-252 (DPAK)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 0
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AUD 0.8817

Multiples of: 1

7.5 A200 V325 mOhmsN - Channel 3.25 V- 55 C+ 150 C52 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel30 V15 nCEnhancement  
DMN22M5UFG-7


MOSFET MOSFET BVDSS: 8V 24V PowerDI3333-8 T&R 2K
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 0
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AUD 0.8818

Multiples of: 1

                   
SIHL630STRL-GE3


N-Channel 200 V 9A (Tc) 3.1W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)
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Vishay 0
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AUD 0.8818

Multiples of: 1

9 A200 V400 mOhmsN - Channel 1 V- 55 C+ 150 C74 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel10 V40 nCEnhancement  
PMPB10XNEAX


MOSFET PMPB10XNEA/SOT1220/SOT1220
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia 0
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AUD 0.8818

Multiples of: 1

                   
SI7388DP-T1-E3


MOSFET 30V 19A 5.0W 7.0mohm 10V
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Vishay 0
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AUD 0.8821

Multiples of: 1

19 A30 V7 mOhmsn - channel20 V - 55 C+ 150 C5 Wsmd/smtSO - 8Reel    enhancement trenchfet/powerpak
HY3008B


MOSFET N Trench 80V 100A (Tc) 4V @ 250uA 8.5 mΩ @ 50A,10V TO-263-2L RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HuaYi 0
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AUD 0.8823

Multiples of: 1

                   
SM1A33PSUC-TRG


MOSFET P Trench 100V 38A 3V @ 250uA 49 mΩ @ 10A,4.5V TO-252-2 RoHS
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Sinopower 0
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AUD 0.8823

Multiples of: 1

                   
MCH3375-TL-W


MOSFET PCH 4V DRIVE SERIES
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ON Semiconductor 0
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AUD 0.8823

Multiples of: 1

1.6 A30 V227 mOhmsp - channel 2.6 V + 150 C800 mWsmd/smtSOT - 323 - 3Cut Tapesi1 channel20 V2.2 nCenhancement  
IRFU320PBF


MOSFET N Trench 400V 3.1A 4V @ 250uA 1.8 Ω @ 1.9A,10V TO-251 (I-PAK) RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 0.8824

Multiples of: 1

                   
SI7900AEDN-T1-GE3


Vishay Semiconductors MOSFET 20V 8.5A 3.1W 26mohm 4.5V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 0.8825

Multiples of: 3000

6 A20 V26 mOhmsn - channel12 V - 55 C+ 150 C1.5 Wsmd/smtPOWERPAK - 1212 - 8Reelsi   enhancement trenchfet/powerpak
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