MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF6721STRPBF


Transistor: N-MOSFET; unipolar; 30V; 60A; 42W; DirectFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 0.8734

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            hexfet®      
VSF013N10MS


MOSFET N Trench 100V 43A 2.4V @ 250uA 16 mΩ @ 20A,4.5V TO-220F RoHS
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Vanguard 0
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AUD 0.8734

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AUIRFR9024N


Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
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AUD 0.8736

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            hexfet®      
AUIRF7341Q


MOSFET AUTO 55V 1 N-CH HEXFET 50mOhms
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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AUD 0.8736

Multiples of: 1

5.1 A55 V65 mOhmsn - channel20 V - 55 C 2.4 Wsmd/smtSOIC - 8Tube   29 nCenhancement  
TP2104N3-G-P003


Microchip Technology MOSFET P-CH Enhancmnt Mode MOSFET
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Microchip 0
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AUD 0.8737

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- 250 mA- 40 V10 OhmsP - Channel  - 55 C+ 150 C740 mWThrough HoleTO - 92 - 3Reel 1 Channel20 V Enhancement  
FDMS8670AS


30V, 42A, 3.0m ohm,NCH, POWER TRENCH SYNCFET
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ON Semiconductor 0
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AUD 0.8737

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DMG4N65CT


Diodes Incorporated MOSFET N-CH MOSFET 650V 4A
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AUD 0.874

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4 A650 V3 Ohmsn - channel 3 V- 55 C+ 150 C2.19 Wthrough holeTO - 220AB - 3Tubesi1 channel30 V13.5 nCenhancement  
IRLR8103VPBF


International Rectifier MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC
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AUD 0.8743

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89 A30 V10.5 mOhmsN - Channel20 V - 55 C+ 150 C89 WSmd/SmtDPAK - 3TubeSi1 Channel20 V27 nCEnhancement  
DMT10H009LCG-7


MOSFET MOSFET BVDSS: 61V-100V
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AUD 0.8743

Multiples of: 2000

47 A100 V12.9 mOhmsN - Channel 1.1 V- 55 C+ 150 C2.1 WSmd/SmtV - DFN3333 - 8Cut TapeSi1 Channel20 V20.2 nCEnhancement  
JCS640RH-O-R-N-A


MOSFET N Trench 200V 18A 4V @ 250uA 150 mΩ @ 9A,10V TO-252-2 (DPAK) RoHS
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AUD 0.8744

Multiples of: 1

                   
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