MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC196N10NS G


MOSFET OptiMOS 2 PWR TRANST 100V 45A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
6 to 16 Weeks Calender.png

AUD 0.8718
Multiples of: 1

8.5 A100 V19.6 mOhmsN - Channel  - 55 C+ 150 C78 WSmd/SmtTDSON - 8ReelSi1 Channel20 V Enhancement Optimos
BRCS90P03RA


MOSFET P Trench 30V 90A 2.2V @ 250uA 6 mΩ @ 20A,10V TO-220 RoHS
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Blue Rocket 0
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AUD 0.8719
Multiples of: 1

                   
SLF7N65SV


650V 7A 35W 1.1Ω@10V,3.5A 4V@250uA 4.08pF@25V N Channel 1130pF@25V 26nC@10V -55℃~+150℃@(Tj) TO-220F MOSFETs ROHS
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Maplesemi 0
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AUD 0.8723
Multiples of: 1

                   
PH5030AL,115


Trans MOSFET N-CH 30V 91A 5-Pin(4+Tab) LFPAK T/R
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NXP 0
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AUD 0.8725
Multiples of: 1

91 A35 V5 mOhmsn - channel 2.45 V- 55 C+ 175 C61 Wsmd/smtLFPAK - 4Reel 1 channel+/- 20 V14.1 nC   
IPD65R660CFDBTMA1


Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
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Infineon 0
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AUD 0.8726
Multiples of: 2500

            coolmos      
IRFR5505TR


MOSFET TO-252 RoHS
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VBsemi Elec 0
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AUD 0.8728
Multiples of: 1

                   
BSZ086P03NS3EGATMA


Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8
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AUD 0.8729
Multiples of: 1

            optimos p3      
IRFZ46N


IRFZ46N HEXFET
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AUD 0.8729
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46 A55 V16.5 mOhmsN - Channel20 V   88 WThrough HoleTO - 220 - 3Tube   48 nC   
NCEP85T12


TO-220 MOSFETs ROHS
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NCE Power 0
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AUD 0.8729
Multiples of: 1

                   
IRFR3411PBF


Transistor: N-MOSFET; unipolar; 100V; 32A; 130W; DPAK
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Infineon 0
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AUD 0.8733
Multiples of: 1

32 A100 V44 mOhmsN - Channel  - 55 C+ 175 C130 WSmd/SmtDPAKTubeSi1 Channel20 V48 nCEnhancement  
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