MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
MTP6N60E-VB


600V 8A 780m@10V 1PCSNChannel TO-220 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

VBsemi Elec 8
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AUD 1.2435
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STL50DN6F7


MOSFET Dual N-channel 60 V, 9 mOhm typ., 57 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island package
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STMicroelectronics 0
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AUD 0.865
Multiples of: 3000

57 A60 V11 mOhmsN - Channel 2 V- 55 C+ 175 C62.5 WSmd/SmtPowerflat - 5X6 - 8Cut TapeSi2 Channel20 V17 nCEnhancement  
STB100N6F7


STMicroelectronics MOSFET
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STMicroelectronics 0
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AUD 0.865
Multiples of: 1000

100 A60 V5.6 mOhmsn - channel 2 V- 55 C+ 175 C125 Wsmd/smtTO - 263 - 3Tape And Reelsi1 channel20 V30 nCenhancement stripfet
SI4190ADY-T1-GE3


Vishay Semiconductors MOSFET 100V 8.8mOhm10V 18.4A N-Ch MV T-FET
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Vishay 0
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AUD 0.865
Multiples of: 2500

18.4 A100 V7.3 mOhmsN - Channel 1.5 V- 55 C+ 150 C6 WSmd/SmtSO - 8-Si1 Channel20 V67 nCEnhancement Trenchfet
STL4N80K5


MOSFET N-Ch 800V 2.1Ohm typ 2.5A Zener-protected
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STMicroelectronics 0
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AUD 0.865
Multiples of: 3000

2.5 A800 V2.5 Ohmsn - channel30 V4 V- 55 C+ 150 C38 Wsmd/smtPowerflat - 8 5X6Reelsi1 channel30 V10.5 nC  mdmesh
FDD18N20LZ


Fairchild Semiconductor MOSFET 200V NChannel UniFET
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ON Semiconductor 0
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AUD 0.865
Multiples of: 2500

16 A200 V125 mOhmsN - Channel  - 55 C+ 150 C89 WThrough HoleDPAK - 3ReelSi1 Channel    Unifet
SPA02N80C3XKSA1


Trans MOSFET N-CH 800V 2A 3-Pin(3+Tab) TO-220FP Tube
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Infineon 0
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AUD 0.8652
Multiples of: 1

   N Channel       Tube       
IPI80N04S3-04


MOSFET N-Ch 40V 80A I2PAK-3 OptiMOS-T
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Infineon 0
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AUD 0.8652
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80 A40 V4.2 mOhmsn - channel  - 55 C+ 175 C136 Wthrough holeTO - 262Tubesi1 channel20 V enhancement optimos
STB25NF06LAG


MOSFET Automotive-grade N-channel 60 V, 53 mOhm typ., 20 A STripFET II Power MOSFET in a D2PAK package
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STMicroelectronics 0
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AUD 0.8652
Multiples of: 1

--   ----Smd/SmtTO - 263 - 3 Si -- Aec - Q101Stripfet
IPA60R520C6


Infineon Technologies MOSFET N-Ch 600V 8.1A TO220FP-3 CoolMOS C6
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Infineon 0
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AUD 0.8653
Multiples of: 1

8.1 A600 V520 mOhmsn - channel20 V2.5 V- 55 C+ 150 C29 Wthrough holeTO - 220FP - 3Tubesi1 channel20 V23.4 nCenhancement coolmos
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