MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TPA65R600M


TO-220F-3 MOSFETs ROHS
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UNIGROUP 0
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AUD 0.7885
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SIHD5N80AE-GE3


MOSFET DPAK
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AUD 0.7885
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4.4 A800 V1.35 OhmsN - Channel 4 V- 55 C+ 150 C62.5 WSMD/SMTTO - 252 - 4TubeSi1 Channel- 30 V , + 30 V11 nCEnhancement  
BSP125L6327


MOSFET N-Ch 600V 120mA SOT-223-3
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Infineon 0
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AUD 0.7885
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NVMFS025P04M8LT1G


MOSFET MV8 40V P-CH LL IN S08FL PACKAGE
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ON Semiconductor 0
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AUD 0.7885
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NVMFS6H858NLWFT1G


MOSFET T8 80V LL SO8FL
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ON Semiconductor 0
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AUD 0.7885
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KF7N65F-VB


650V 7A 1.1@10V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.7886
Multiples of: 1

                   
SP8K31-TB


60V 7A 4W 28mO@10V,4.5A 2 N-Channel SO-8 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.7888
Multiples of: 1

                   
NVMFS5C450NWFT1G


MOSFET T6-D3F 40V NFET
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ON Semiconductor 0
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AUD 0.789
Multiples of: 1500

         Smd/SmtSO - FL - 8Cut TapeSi    Aec - Q101 
TK46E08N1,S1X


Toshiba MOSFET 80V N-Ch PWR FET 80A 103W 37nC
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AUD 0.7892
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80 A80 V8.4 mOhmsn - channel10 V   103 Wthrough holeTO - 220 - 3Reelsi1 channel10 V37 nC   
SI5904DC-T1-E3


MOSFET 20V 4.2A 2.1W
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Vishay 0
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AUD 0.7893
Multiples of: 1

3.1 A20 V75 mOhmsn - channel12 V - 55 C+ 150 C1.1 Wsmd/smtCHIP - FET - 8Reel    enhancement trenchfet
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