MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQS161ELNW-T1_GE3


MOSFETs Automotive P-Channel 60 V (D-S) 175C MOSFET
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Vishay 0
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AUD 0.7857
Multiples of: 1

250 uA60 V20 mOhmsP - Channel 2 V- 55 C+ 175 C119 WSMD/SMT1212 - 8SLW Si3 Channel- 10 V , + 10 V30 nCEnhancement  
NVD6415ANLT4G-VF01


MOSFET NFET DPAK 100V 23A 56MOHM
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 0.7858
Multiples of: 1

           Cut Tape       
IRL520PBF-BE3


N-Channel 100V 9.2A (Tc) 60W (Tc) Through Hole TO-220AB
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 0.7859
Multiples of: 1000

9.2 A100 V270 mOhmsN - Channel 2 V- 55 C+ 175 C60 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 10 V , + 10 V12 nCEnhancement  
IRF7389PBF


Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8
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Infineon 0
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AUD 0.786
Multiples of: 1

7.3 A30 V58 mOhmsN - Channel, P - Channel - 1 V , 1 V- 55 C+ 150 C2.5 WSmd/SmtSOIC - 8TubeSi2 Channel20 V22 nCEnhancement  
AO4240&5-VB


SOP-8 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.786
Multiples of: 1

                   
GT060N10T


MOSFET TO-220 RoHS
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GOFORD 0
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AUD 0.7862
Multiples of: 1

                   
IRFU120ZPBF


MOSFET MOSFT 100V 8.7A 190mOhm 6.9nC Qg
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Infineon 0
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AUD 0.7865
Multiples of: 75

8.7 A100 V190 mOhmsn - channel20 V   35 Wthrough holeIPAK - 3Tube   6.9 nC   
PSMN2R5-30YL,115


NXP Semiconductors MOSFET <=30V N CH TRENCHFET
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Nexperia 0
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AUD 0.7865
Multiples of: 1500

100 A30 V2.5 mOhmsN - Channel20 V - 55 C+ 175 C88 WSmd/SmtLFPAK - 4ReelSi1 Channel20 V Enhancement  
JCS7N80FH-220MF


MOSFET N Trench 800V 7A (Tc) 5V @ 250uA 1.6 Ω @ 3.5A,10V TO-220MF RoHS
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Jilin 0
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AUD 0.7867
Multiples of: 1

                   
HF25N50


MOSFET N Trench 500V 25A (Tc) 4V @ 250uA 300 mΩ @ 12.5A,10V TO-220F RoHS
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Haolin 0
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AUD 0.7869
Multiples of: 1

                   
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