MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
VIS30023


MOSFET N Channel 30V 183A(Tc) 2.2V @ 250mA 2.8mO @ 20A,10V TO-263 RoHS
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VOLTAIC 0
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AUD 0.7638

Multiples of: 1

                   
DMJ7N70SK3-13


Diodes Incorporated MOSFET Transistor PNP 30Vceo
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Diodes Incorporated 0
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AUD 0.764

Multiples of: 2500

3.9 A700 V1 Ohmsn - channel 2.9 V- 55 C+ 150 C28 Wsmd/smtTO - 252 - 3Reelsi1 channel30 V13.9 nCenhancement powerdi
FDMS3615S


Fairchild Semiconductor MOSFET DUAL N-Channel PowerTrench MOSFET
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ON Semiconductor 0
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AUD 0.7642

Multiples of: 1

16 A , 18 A25 V5.8 mOhms , 3.4 mOhmsn - channel20 V1.7 V- 55 C+ 150 C2.3 w , 1 Wsmd/smtDPQFN - 8Reelsi2 channel20 V19 nC , 31 nC  power stage powertrench syncfet
BUK9Y07-30B,115


MOSFET N-CHANNEL TRENCHMOS LOGIC LEVEL FET
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Nexperia 0
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AUD 0.7643

Multiples of: 1

75 A30 V4.9 mOhmsN - Channel     Smd/SmtLFPAK56 - 5Cut TapeSi1 Channel     
SIR4608DP-T1-GE3


MOSFETs N-CHANNEL 60 V MOSFET PWRPAK
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Vishay 0
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AUD 0.7643

Multiples of: 1

15.1 A60 V12.4 mOhms  3 V- 55 C+ 150 C3.6 W  Reel , Cut TapeSi - 20 V , + 20 V7 nC   
SIR5712DP-T1-GE3


MOSFETs N-Channel 150 V (D-S) MOSFET PowerPAK SO-8, 55.5 mohm a. 10V 62.4 mohm a. 7.5V
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Vishay 0
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AUD 0.7643

Multiples of: 1

18 A150 V55.5 mOhmsN - Channel 4 V- 55 C+ 150 C40 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V7.5 nCEnhancement  
IXTP2N60P


IXYS MOSFET 2.0 Amps 600 V 4.7 Ohm Rds
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IXYS 0
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AUD 0.7644

Multiples of: 1

2 A600 V5.1 Ohmsn - channel 5 V- 55 C+ 150 C55 Wthrough holeTO - 220 - 3Tubesi1 channel30 V7 nCenhancement polarhv
TK6R9P08QM,RQ


MOSFET UMOS10 DPAK 80V 6.9mohm
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Toshiba 0
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AUD 0.7646

Multiples of: 1

62 A80 V6.9 mOhmsN - Channel 3.5 V-+ 175 C89 WSMD/SMTDPAK - 2Cut Tape , ReelSi1 Channel- 20 V , + 20 V39 nCEnhancement  
FQS4903TF


Mosfet Array 2 N-Channel (Dual) 500V 370mA 2W Surface Mount 8-SOIC
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ON Semiconductor 0
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AUD 0.7647

Multiples of: 3000

   Dual N Channel               
100N10NF


MOSFET TO-220NF RoHS
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AUD 0.7652

Multiples of: 1

                   
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