MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLU8721PBF


MOSFET MOSFT 30V 65A 8.5nC 8.4mOhm Qg log lvl
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Infineon 0
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AUD 0.7509
Multiples of: 1

65 A30 V11.8 mOhmsn - channel    65 Wthrough holeIPAKTubesi1 channel20 V8.5 nC   
FDMC7678-VB


30V 40A 1PCSNChannel QFN8(3X3) MOSFETs ROHS
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AUD 0.7509
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IRFR1205HR


Trans MOSFET N-CH 55V 44A 3-Pin(2+Tab) DPAK
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AUD 0.751
Multiples of: 62

                enhancement  
NTMFS4C55N-HXY


30V 150A 2m 1PCSNChannel DFN-8L(5x6) MOSFETs ROHS
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HXY MOS 0
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AUD 0.751
Multiples of: 1

                   
IRLD110PBF


N-Channel 100 V 1A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
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AUD 0.7511
Multiples of: 1

1 A100 V540 mOhmsN - Channel 1 V- 55 C+ 175 C1.3 WThrough HoleHVMDIP - 4TubeSi1 Channel5 V6.1 nCEnhancement  
IRLIZ44NPBF


Transistor: N-MOSFET; unipolar; 55V; 28A; 38W; TO220FP
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AUD 0.7513
Multiples of: 1

            Hexfet®      
SQRS152ELP-T1_GE3


MOSFETs Automotive N-Channel 40 V (D-S) 175C MOSFET PowerPAK SO-8SW, 5 mohm a. 10V, 7.5 mohm a. 4.5V
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AUD 0.7514
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58 A40 V5 mOhmsN - Channel 2.2 V- 55 C+ 175 C35 WSMD/SMTPOWERPAK SO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V34 nCEnhancement  
SQS140ELNW-T1_GE3


MOSFETs Automotive N-Channel 40 V (D-S) 175C MOSFET PowerPAK 1212-8SLW, 2.53 mohm a. 10V, 3.45 mohm a. 4.5V
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Vishay 0
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AUD 0.7514
Multiples of: 1

153 A40 V3.45 mOhmsN - Channel 2.5 V- 55 C+ 175 C119 WSMD/SMTPOWERPAK 1212 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V53 nCEnhancement  
CEP9060N


MOSFET N Trench 55V 90A (Tc) 4V @ 250uA 10.5 mΩ @ 62A,10V TO-220 (TO-220-3) RoHS
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AUD 0.7516
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GT011N03ME


30V 209A 1.28m@10V 2.5V 1PCSNChannel TO-263 MOSFETs ROHS
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AUD 0.7516
Multiples of: 1

                   
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