MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVATS5A112PLZT4G


MOSFET PCH 4V DRIVE SERIES
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ON Semiconductor 0
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AUD 0.7498
Multiples of: 3000

- 27 A- 60 V33 mOhmsp - channel - 2.6 V- 55 C+ 175 C48 Wsmd/smtATPAK - 3Cut Tapesi1 channel20 V33.5 nCenhancementaec - q101 
3N80L-TF1-T


MOSFET N Trench 800V 3A (Tc) 4.5V @ 250uA 4.2 O @ 1.5A,10V TO-220F (TO-220IS) RoHS
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Unisonic 0
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AUD 0.7498
Multiples of: 1

                   
SLD65R700S2


MOSFET TO-252 RoHS
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Maplesemi 0
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AUD 0.7498
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GT52N10D5


MOSFET DFN8L-5×6 RoHS
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GOFORD 0
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AUD 0.7498
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TSG12N10AT


MOSFET N Trench 100V 55A (Tc) 2.5V @ 250uA 12 mΩ @ 20A,10V DFN_5x6 RoHS
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UNIGROUP 0
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AUD 0.7498
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GT011N03D5E


30V 209A 0.78m@10V 2.5V 1PCSNChannel DFN5x6-8L MOSFETs ROHS
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GOFORD 0
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AUD 0.7498
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IPA60R280P7XKSA1


MOSFET LOW POWER_NEW
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Infineon 0
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AUD 0.75
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12 A600 V214 mOhmsN - Channel 3 V- 55 C+ 150 C24 WThrough HoleTO - 220FP - 3TubeSi1 Channel20 V18 nCEnhancement Coolmos
SIHD6N65E-GE3


Vishay Semiconductors MOSFET 650V 600mOhm10V 7A N-Ch E-SRS
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Vishay 0
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AUD 0.75
Multiples of: 3000

7 A650 V600 mOhmsN Channel 4 V- 55 C+ 150 C78 WSmd/SmtTO - 252 - 3BulkSi1 Channel30 V24 nCEnhancement  
STB11N52K3


MOSFET N-channel 525 V 0.41 Ohm 10 A SuperMESH3
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STMicroelectronics 0
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AUD 0.75
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10 A525 V510 mOhmsN - Channel30 V   125 WSmd/SmtD2PAK - 3Reel   51 nC   
FDZ595PZ


Fairchild Semiconductor Fairchild Semiconductor
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ON Semiconductor 0
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AUD 0.75
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