MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TT8M2TR


ROHM Semiconductor MOSFET TRANS MOSFET NPCH 30V20V 2.5A 8PIN
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ROHM 0
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AUD 0.6616
Multiples of: 1

2.5 A30 v , - 20 V90 mOhms , 68 mOhmsN - Channel, P - Channel 1.5 v , - 1 V- 55 C+ 150 C1.25 WSmd/SmtTSST - 8ReelSi2 Channel12 v , 10 V3.2 nC , 12 nC   
WMK190N03TS


Transistor: N-MOSFET; unipolar; TO220-3
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Wayon 0
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AUD 0.6617
Multiples of: 1

                   
DMP1008UCB9-7


MOSFET, P-CH, 8V, 9.8A, 150DEG C, 0.84W
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 0
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AUD 0.662
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IRLD014PBF


N-Channel 60 V 1.7A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
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Vishay 0
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AUD 0.662
Multiples of: 1

1.7 A60 V200 mOhmsN - Channel 1 V- 55 C+ 175 C1.3 WThrough HoleHVMDIP - 4TubeSi1 Channel5 V8.4 nCEnhancement  
TK3R1P04PL,RQ


MOSFET N-Ch 40V 4670pF 60nC 130A 87W
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Toshiba 0
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AUD 0.662
Multiples of: 2500

130 A40 V2.5 mOhmsN - Channel 1.4 V + 175 C87 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V60 nCEnhancement  
NVMFS5C645NLAFT1G


MOSFET T6 60V SO8FL
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ON Semiconductor 0
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AUD 0.6621
Multiples of: 1

100 A60 V3.3 mOhmsN - Channel 1.2 V- 55 C+ 175 C79 WSmd/SmtDFN - 5Cut TapeSi1 Channel10 V34 nCEnhancementAec - Q101 
TPH3R003PL,LQ


MOSFET N-Ch 30V 2940pF 50nC 134A 90W
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Toshiba 0
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AUD 0.6622
Multiples of: 3000

134 A30 V2.2 mOhmsN - Channel 1.1 V + 175 C90 WSmd/SmtSOP - ADVANCE - 8Cut TapeSi1 Channel20 V50 nCEnhancement  
TPCA8047-H(T2L1,VM


MOSFET SOP-8-ADV PD=45W 1MHz PWR MOSFET TRNS
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Toshiba 0
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AUD 0.6625
Multiples of: 1

32 A40 V8.5 mOhmsN - Channel 2.3 V- 55 C+ 150 C45 WSmd/SmtSOP - 8Cut TapeSi1 Channel20 V43 nCEnhancement U - Mosvi - H
IRF7606PBF


MOSFET MICRO-8
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Infineon 0
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AUD 0.6625
Multiples of: 1

   P Channel      MICRO - 8        
IPAN70R900P7SXKSA1


Transistor: N-MOSFET; unipolar; 700V; 3.5A; 17.9W; TO220FP
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Infineon 0
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AUD 0.6626
Multiples of: 1

            Coolmos P7      
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