MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
10N65KL-TF1-T


MOSFET N Trench 650V 10A (Tc) 4V @ 250uA 1.3 Ω @ 5A,10V TO-220F1 RoHS
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Unisonic 0
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AUD 0.6609

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DM12N65E


TO-220F-3 MOSFETs ROHS
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DESAY 0
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AUD 0.6609

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SKST065N08N


MOSFET N Channel 85V 120A(Tc) 4V @ 250uA 6.5mO @ 50A,10V TO-220 RoHS
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CRMICRO 0
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AUD 0.6609

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TPB70R950M


700V 4.5A 870mO@10V,2A 37W N Channel TO-263-3 MOSFETs ROHS
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UNIGROUP 0
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AUD 0.6609

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IPD30N06S2L23ATMA1


MOSFET N-Ch 55V 30A DPAK-2 OptiMOS
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Infineon 0
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AUD 0.6612

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   n - channel       Reelsi1 channel     
DMN6013LFG-7


Diodes Incorporated MOSFET 60V N-Ch Enh FET 20Vgs 10.3A 2577pF
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Diodes Incorporated 0
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AUD 0.6613

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10.3 A60 V12.3 mOhmsN - Channel 1.8 V- 55 C+ 150 C1 WSmd/SmtPowerdi3333 - 8ReelSi1 Channel20 V26.6 nCEnhancement Dmn6
STN6N60M2


MOSFET N-channel 600 V, 1.00 Ohm typ 5.5 A MDmesh M2 Power MOSFET
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STMicroelectronics 0
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AUD 0.6613

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5.5 A600 V1.2 OhmsN - Channel 4 V- 55 C+ 150 C6 WSMD/SMT Reel , Cut TapeSi1 Channel- 25 V , + 25 V6.2 nCEnhancement MDmesh
HFS10N60U


600V 9.5A 800mO@10V,4.75A 50W N Channel TO-220F-3 MOSFETs ROHS
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SemiHow 0
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AUD 0.6613

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PSMN039-100YS


MOSFET,N CH,100V,28.1A,LFPAK
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Nexperia 0
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AUD 0.6615

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   N Channel               
RRQ045P03FRATR


MOSFET, AEC-Q101, P-CH, -30V, TSMT
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ROHM 0
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AUD 0.6615

Multiples of: 1

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