MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPD30N03S2L-20


Infineon Technologies MOSFET N-Ch 30V 30A DPAK-2 OptiMOS
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Infineon 0
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AUD 0.6408
Multiples of: 2500

30 A30 V20 mOhmsn - channel 1.2 V- 55 C+ 175 C60 Wsmd/smtTO - 252 - 3Reelsi1 channel20 V19 nCenhancementaec - q101optimos
IRFR3704ZPBF


MOSFET 20V 1 N-CH HEXFET 8.4mOhms 9.3nC
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Infineon 0
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AUD 0.6408
Multiples of: 1

60 A20 V9.2 mOhmsn - channel20 V2.1 V- 55 C+ 175 C48 Wsmd/smtDPAK - 3Tube   9.3 nCenhancement  
SIA426DJ-T1-GE3


MOSFET 20V 4.5A 19W 23.6mohm @ 10V
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Vishay 0
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AUD 0.6409
Multiples of: 1

   n - channel  - 55 C+ 150 C smd/smtPOWERPAK SC - 70 - 6LReelsi     trenchfet, powerpak
DMTH43M8LPS-13


MOSFET MOSFET BVDSS: 31V~40V PowerDI5060-8 T&R 2.5K
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Diodes Incorporated 0
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AUD 0.6411
Multiples of: 1

100 A40 V3.3 mOhmsN - Channel 1 V- 55 C+ 175 C83 WSmd/SmtPowerdi5060 - 8Cut TapeSi1 Channel20 V38.5 nCEnhancement  
8N60L-TF3-T


MOSFET N Channel 600V 8A 4V @ 250uA 1.2O @ 4A,10V TO-220F RoHS
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Unisonic 0
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AUD 0.6411
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TK40S06N1L,LQ


MOSFET PWR MOSFET PD=88.2W F=1MHZ
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Toshiba 0
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AUD 0.6411
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40 A60 V10.5 mOhmsN - Channel 1.5 V- 55 C+ 175 C88.2 WSmd/SmtDPAK - 3Cut TapeSi1 Channel10 V26 nCEnhancement U - Mosviii - H
PKC26BB


MOSFET N Trench 30V 151A 2.35V @ 250uA 2.3 mΩ @ 20A,4.5V DFN5*6 RoHS
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NIKO 0
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AUD 0.6411
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AOTF2916L


Transistor: N-MOSFET; unipolar; 100V; 12A; 11.5W; TO220F
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Alpha & Omega 0
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AUD 0.6411
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NVMFS5C460NLWFT1G


MOSFET T6 40V NCH LL IN SO8
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ON Semiconductor 0
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AUD 0.6411
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78 A40 V3.7 mOhmsN - Channel 1.2 V- 55 C+ 175 C50 WSmd/SmtSO - FL - 8Cut TapeSi1 Channel20 V23 nCEnhancementAec - Q101 
LNG03R031


MOSFET TO-252 RoHS
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Lonten Semiconductor 0
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AUD 0.6413
Multiples of: 1

                   
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