MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
YJB70G10B


100V 70A 7.2mΩ@10V,20A 125W 2.8V@250uA N Channel TO-263 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Yangjie 0
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AUD 0.6382
Multiples of: 1

                   
CS10N65FA9R


MOSFET N Trench 650V 10A (Tc) 4V @ 250uA 1 Ω @ 5A,10V TO-220F (TO-220IS) RoHS
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Huajing 0
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AUD 0.6384
Multiples of: 1

                   
VST011N10MS-G


TO-220AB MOSFETs ROHS
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Vanguard 0
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AUD 0.6385
Multiples of: 1

                   
VSP002N03MST-G


PDFN5x6 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vanguard 0
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AUD 0.6385
Multiples of: 1

                   
NCE6075K


MOSFET N Trench 60V 75A 4V @ 250uA 11.5 mΩ @ 30A,10V TO-252-2 (DPAK) RoHS
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NCE Power 0
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AUD 0.6385
Multiples of: 1

                   
BSC22DN20NS3GATMA1


Transistor: N-MOSFET; unipolar; 200V; 7A; 34W; PG-TDSON-8
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Infineon 0
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AUD 0.6386
Multiples of: 1

            Optimos 3      
RXH070N03TB1


MOSFET NCH 30V 7A POWER
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ROHM 0
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AUD 0.6389
Multiples of: 1

7 A30 V28 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSmd/SmtSOP - 8Cut TapeSi1 Channel20 V5.8 nCEnhancement  
FDMC6890NZ


Fairchild Semiconductor MOSFET 20V Dual N-Ch PowerTrench MOSFET
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ON Semiconductor 0
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AUD 0.6389
Multiples of: 1

4 A20 V68 mOhms , 100 mOhmsn - channel12 V - 55 C+ 150 C1.92 Wsmd/smtPOWER - 33 - 6Reelsi2 channel12 V enhancement powertrench
PHP9NQ20T,127


MOSFET RAIL PWR-MOS
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NXP 0
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AUD 0.639
Multiples of: 1

8.7 A200 V400 mOhmsn - channel  - 55 C+ 175 C88 Wthrough holeTO - 220 - 3Tubesi1 channel30 V enhancement  
TK4P60D,RQ


MOSFET PWR MOSFET V=600 PD=80W
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Toshiba 0
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AUD 0.6391
Multiples of: 2000

4 A600 V1.7 OhmsN - Channel 2.4 V- 55 C+ 150 C100 WSmd/SmtDPAK - 3Cut TapeSi1 Channel10 V12 nCEnhancement Mosvii
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