MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PSMN6R0-30YL


MOSFET, N CH 30V 73A SOT669
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Nexperia 0
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AUD 0.6237

Multiples of: 1

   N Channel               
PSMN6R1-30YLD


MOSFET, N CH, 30V, 66A, SOT-669-4
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Nexperia 0
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AUD 0.6238

Multiples of: 1

   N Channel               
SIS452DN-T1-GE3


MOSFET 12V Vds 20V Vgs PowerPAK 1212-8
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Vishay 0
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AUD 0.6239

Multiples of: 1

   n - channel  - 55 C+ 150 C smd/smtPOWERPAK 1212 - 8Reel       
BUK7E13-60E,127


MOSFET N-channel TrenchMOS standard level FET
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Nexperia 0
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AUD 0.624

Multiples of: 1

58 A60 V9.6 mOhmsn - channel 3 V- 55 C+ 175 C96 Wsmd/smtTO - 262 - 3Tubesi1 channel20 V22.9 nCenhancement  
FH13N60K


TO-220FP MOSFETs ROHS
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STMicroelectronics 0
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AUD 0.624

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ZXMP6A17N8TC


P-Channel 60 V 2.7A (Ta) 1.56W (Ta) Surface Mount 8-SO
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Diodes Incorporated 0
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AUD 0.624

Multiples of: 1

2.7 A60 V125 mOhmsp - channel 1 V- 55 C+ 150 C1.56 Wsmd/smtSOIC - 8Reelsi1 channel20 V9 nC   
SQ7414AENW-T1_GE3


MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified
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Vishay 0
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AUD 0.624

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18 A60 V16 mOhmsN - Channel 1.5 V- 55 C+ 175 C62 WSmd/SmtPOWERPAK - 1212 - 8Cut TapeSi1 Channel20 V25 nCEnhancementAec - Q101Trenchfet
NVMFS5C450NT1G


MOSFET T6-D3F 40V NFET
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ON Semiconductor 0
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AUD 0.6243

Multiples of: 1500

         Smd/SmtSO - FL - 8Cut TapeSi    Aec - Q101 
SPD30N03S2L-10 G


Infineon Technologies MOSFET N-Ch 30V 30A DPAK-2
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AUD 0.6244

Multiples of: 1

30 A30 V10 mOhmsN - Channel20 V1.2 V- 55 C+ 175 C100 WSmd/SmtDPAK - 3ReelSi1 Channel20 V41.8 nCEnhancement Optimos
LNC06R079


MOSFET N Channel 60V 90A(Tc) 1.8V @ 250uA 7.9mO @ 30A,10V TO-220 RoHS
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Lonten Semiconductor 0
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AUD 0.6245

Multiples of: 1

                   
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