MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSZ100N06NS


Infineon Technologies MOSFET
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Infineon 0
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AUD 0.623

Multiples of: 1

40 A60 V10 mOhmsN - Channel 2.1 V- 55 C+ 150 C36 WSmd/SmtPG - TSDSON - 8ReelSi1 Channel10 V12 nCEnhancement Optimos
LND01K1-G


N-Channel 9 V 330mA (Tj) 360mW (Ta) Surface Mount SOT-23-5
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Microchip 0
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AUD 0.623

Multiples of: 1

330 mA9 V1.4 OhmsN - Channel0.6 V  + 125 C360 mWSmd/SmtSOT - 23 - 5ReelSi1 Channel600 mV Depletion  
SQ2319ES-T1-GE3


MOSFET 40V 4.6A 3W P-Ch Automotive
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Vishay 0
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AUD 0.623

Multiples of: 3000

- 4.6 A- 40 V75 mOhmsp - channel20 V  + 175 C3 Wsmd/smtSOT - 23 - 3Reel       
HF12N65


TO-220F MOSFETs ROHS
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Haolin 0
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AUD 0.6231

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BSO080P03NS3EGXUMA


Transistor: P-MOSFET; unipolar; -30V; -12A; 1.6W; PG-DSO-8
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Infineon 0
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AUD 0.6233

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            optimos3 p3      
17P10L-TA3-T


MOSFET P Trench 100V 17A (Tc) 4V @ 250uA 180 mO @ 8.25A,10V TO-220 (TO-220-3) RoHS
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Unisonic 0
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AUD 0.6233

Multiples of: 1

           Tube - Packed       
QH8K26TR


MOSFET 40V NCH+NCH SMALL SIGNAL
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ROHM 0
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AUD 0.6233

Multiples of: 3000

7 A40 V38 mOhmsN - Channel 1 V- 55 C+ 150 C2.6 WSmd/SmtT SMT - 8Cut TapeSi2 Channel12 V2.9 nCEnhancement  
HY1908B


MOSFET TO-263-2L RoHS
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HUAYI 0
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AUD 0.6233

Multiples of: 1

                   
HSH18N20


200V 18A 170m@10V,9A 83W 2.5V@250uA 1PCSNChannel TO-263 MOSFETs ROHS
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HUASHUO 0
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AUD 0.6235

Multiples of: 1

                   
AGM40P100C


40V 114A 135W 4.6m@10V,20A 1.6V@250uA 1PCSPChannel TO-220C MOSFETs ROHS
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AUD 0.6235

Multiples of: 1

                   
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