MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ISP75DP06LM


MOSFET SMALL SIGNAL MOSFETS
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Infineon 0
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AUD 0.5523
Multiples of: 5

                   
FC4B22180L1


MOSFET WL-CSP Dual Nchannel MOSFET
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Panasonic 0
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AUD 0.5523
Multiples of: 1

5 A , 10 A20 V22.6 mOhmsn - channel 350 mV- 55 C+ 150 C400 mW , 1.5 Wsmd/smtCSP - 4Reelsi2 channel+/- 8 V23 nCenhancement  
PTA11N45


MOSFET TO-220F RoHS
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PIP 0
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AUD 0.5524
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DM10N65E


TO-220F-3 MOSFETs ROHS
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AUD 0.5526
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JCS7HN60VC-IPAK


MOSFET N Trench 600V 7A (Tc) 4V @ 250uA 1.3 Ω @ 3.5A,10V IPAK RoHS
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AUD 0.5526
Multiples of: 1

                   
SPB08P06PGATMA1


MOSFET SMALL SIGNAL+P-CH
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AUD 0.5526
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   p - channel     smd/smtTO - 263 - 3Reelsi1 channel     
SI9945BDY-T1-GE


Transistor: N-MOSFET x2; unipolar; 60V; 3.4A; 3.1W; SO8
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AUD 0.5526
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2SK3566(STA4,Q,M)


MOSFET N-Ch 900V 2.5A Rdson 6.4 Ohm
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AUD 0.5527
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2.5 A900 V5.6 OhmsN - Channel  - 55 C+ 150 C40 WThrough HoleTO - 220FP - 3TubeSi1 Channel30 V12 nC   
KIA7N60UP


MOSFET N Trench 600V 7A (Tc) 4V @ 250uA 1.4 Ω @ 3.5A,10V TO-220 (TO-220-3) RoHS
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AUD 0.5528
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IRFR3910PBF


Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
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AUD 0.5531
Multiples of: 1

   N - Channel  - 55 C+ 175 C Smd/SmtDPAKTube       
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