MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIS468DN-T1-GE3


MOSFET 80V 19.5mOhm@10V 30A N-Ch MV T-FET
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Vishay 0
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AUD 0.55

Multiples of: 3000

30 A80 V19.5 mOhmsn - channel 1.5 V- 55 C+ 150 C52 Wsmd/smtPOWERPAK 1212 - 8Reelsi1 channel20 V28 nCenhancement trenchfet, powerpak
IPA50R950CE


MOSFET 500V 950 RDS CoolMOS Superjunction MOSFET
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Infineon 0
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AUD 0.55

Multiples of: 1

4.3 A500 V800 mOhmsn - channel   + 150 C26 Wthrough holeTO - 220 - 3 FPTubesi1 channel20 V10.5 nC  coolmos
IRFD120PBF


N-Channel 100 V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
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AUD 0.55

Multiples of: 100

1.3 A100 V270 mOhmsN - Channel 2 V- 55 C+ 175 C1.3 WThrough HoleHVMDIP - 4TubeSi1 Channel10 V16 nCEnhancement  
CPH6442-TL-E


ON Semiconductor MOSFET SWITCHING DEVICE
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AUD 0.55

Multiples of: 1

6 A60 V43 mOhmsn - channel 1.2 V- 55 C+ 150 C1.6 Wsmd/smtSOT - 26 - 6Reelsi1 channel20 V20 nCenhancement  
SIHD3N50D-E3


MOSFET 500V Vds 30V Vgs DPAK (TO-252)
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AUD 0.55

Multiples of: 1

3 A500 V3.2 OhmsN - Channel 5 V- 55 C+ 150 C69 WSmd/SmtTO - 252 - 3ReelSi1 Channel30 V6 nCEnhancement Trenchfet
LSGN04R025


MOSFET N Channel 40V 120A(Tc) 2.2V @ 250uA 5mO @ 20A,4.5V PPAK5×6 RoHS
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Lonten Semiconductor 0
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AUD 0.55

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APJ14N65D


650V 8A 25.5W 560m@10V,3.2A 3.3V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS
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APM Microelectronics 0
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AUD 0.55

Multiples of: 1

                   
SMIRF12N65T1TL


TO-220 MOSFETs ROHS
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SPS 0
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AUD 0.5501

Multiples of: 1

                   
FQU10N20CTU


Fairchild Semiconductor MOSFET N-CH200V10AQFET
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ON Semiconductor 0
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AUD 0.5502

Multiples of: 1

7.8 A200 V360 mOhmsN - Channel30 V - 55 C+ 150 C50 WThrough HoleIPAK - 3TubeSi1 Channel30 V Enhancement  
WSF90P03


MOSFET P Trench 30V 85A (Tc) 2.5V @ 250uA 6 mΩ @ 30A,10V TO-252-2 (DPAK) RoHS
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AUD 0.5502

Multiples of: 1

                   
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