MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vgs - Gate-Source Breakdown Voltage
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI4056DY-T1-GE3


N-Channel 100 V 11.1A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SOIC
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Vishay 0
6 to 16 Weeks Calender.png

AUD 0.5457

Multiples of: 2500

11.1 A100 V17 mOhmsN - Channel 1.5 V- 55 C+ 150 C5.7 WSmd/SmtSO - 8ReelSi1 Channel20 V29.5 nCEnhancement Trenchfet
DMP45H21DHE-13


MOSFET MOSFET BVDSS: 251V-500V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 0
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AUD 0.5458

Multiples of: 1

600 mA450 V21 OhmsP - Channel 3 V- 55 C+ 150 C12.5 WSmd/SmtSOT - 223 - 3 Si1 Channel10 V4.2 nCEnhancement  
WSK140N03


30V 140A null TO-263-2 MOSFETs ROHS
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Winsok 0
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AUD 0.5458

Multiples of: 1

                   
CSD23381F4T


P-Channel 12 V 2.3A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR
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Texas Instruments 0
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AUD 0.5458

Multiples of: 1

- 2.3 A- 12 V175 mOhmsP - channel- 8 V- 950 mV- 55 C+ 150 C500 mWSmd/smtPICOSTAR - 3ReelSi1 Channel- 8 V1.14 nC  Nexfet
BSZ165N04NSGXT/MATROX


Trans MOSFET N-CH 40V 8.9A 8-Pin TSDSON EP
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Infineon 0
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AUD 0.5458

Multiples of: 5000

                   
IRLML6401PBF


MOSFET, P, -12V, -4.3A, MICRO 3
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Infineon 0
Ships to you
by Tue. 01 Sep
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AUD 0.5459

Multiples of: 1

   P Channel               
GT180N12M


TO-263 MOSFETs ROHS
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GOFORD 0
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AUD 0.546

Multiples of: 1

                   
IPSA70R950CEAKMA1


MOSFET CONSUMER
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Infineon 0
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AUD 0.5462

Multiples of: 1

           Tube      Coolmos
IPS80R2K0P7AKMA1


Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; IPAK SL
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Infineon 0
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AUD 0.5463

Multiples of: 1500

            Coolmos P7      
FQP3P20


P-Channel 200 V 2.8A (Tc) 52W (Tc) Through Hole TO-220-3
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ON Semiconductor 0
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AUD 0.5463

Multiples of: 1000

2.8 A200 V2.7 Ohmsp - channel  - 55 C+ 150 C52 Wthrough holeTO - 220 - 3Tubesi1 channel30 V enhancement qfet
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