MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
KU310N10D-RTF/H


MOSFET N Trench 100V 27A (Tc) 4V @ 250uA 31 mΩ @ 13.5A,10V DPAK (1) RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

KEC 0
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AUD 0.5449

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TSP120N10AT


MOSFET TO-220 RoHS
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UNIGROUP 0
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AUD 0.5449

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SUU50N06-07L


60V 55A 11mO@10V,55A N Channel TO-251 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.5449

Multiples of: 1

                   
VS7N65AD


TO-252 MOSFETs ROHS
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Vanguard 0
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AUD 0.5449

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STD5N60DM2


MOSFET N-channel 600 V, 1.38 Ohm typ., 3.5 A MDmesh DM2 Power MOSFET in a DPAK package
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
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AUD 0.545

Multiples of: 2500

3.5 A600 V1.38 OhmsN - Channel 3 V- 55 C+ 150 C45 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel30 V8.6 nCEnhancement Mdmesh
TSM1N60LCH C5-VB


TO-251 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.5452

Multiples of: 1

                   
TPCP8407,LF


MOSFET PWR MOSFET PS-8 PD=1.77W F=1
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Toshiba 0
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AUD 0.5452

Multiples of: 3000

5 A40 V36.3 mOhmsN - Channel, P - Channel - 2 v , 2 V- 55 C+ 175 C1.77 WSmd/SmtPS - 8Cut TapeSi1 Channel10 V11.8 nC , 18 nCEnhancement U - Mosiv / U - Mosvi
SUD35N10-26P-HXY


100V 50A 18mΩ 1PCSNChannel TO-252-2L MOSFETs ROHS
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HXY MOS 0
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AUD 0.5452

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HP3710P(EBD)


TO-220 MOSFETs ROHS
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Haolin 0
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AUD 0.5456

Multiples of: 1

                   
SI4056DY-T1-GE3


N-Channel 100 V 11.1A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SOIC
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Vishay 0
6 to 16 Weeks Calender.png

AUD 0.5457

Multiples of: 2500

11.1 A100 V17 mOhmsN - Channel 1.5 V- 55 C+ 150 C5.7 WSmd/SmtSO - 8ReelSi1 Channel20 V29.5 nCEnhancement Trenchfet
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