MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TPCC8105,L1Q


MOSFET PWR MOSFET PD=30W F=1MHZ
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Toshiba 0
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AUD 0.5211

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23 A30 V7.8 mOhmsP - Channel - 0.8 V- 55 C+ 150 C30 WSmd/SmtTSON - ADVANCE - 8Cut TapeSi1 Channel10 V76 nCEnhancement U - Mosvi
STS3P6F6


STMicroelectronics MOSFET P-Ch 60V 0.13 Ohm 3A STripFET VI
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STMicroelectronics 0
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AUD 0.5211

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3 A- 60 V130 mOhmsp - channel 2 V- 55 C+ 150 C2.7 Wsmd/smtSO - 8Reelsi1 channel20 V6.4 nCenhancement stripfet
SI3993DV-T1-GE3


Vishay Semiconductors MOSFET 30V 2.2A 1.15W 133mohm 10V
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Vishay 0
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AUD 0.5211

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1.8 A- 30 V133 mOhmsp - channel  - 55 C+ 150 C830 mWsmd/smtTSOP - 6Reelsi 20 V   trenchfet
FH10N60K


TO-220FP MOSFETs ROHS
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STMicroelectronics 0
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AUD 0.5211

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ISZ0901NLSATMA1


MOSFET TRENCH <= 40V
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Infineon 0
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AUD 0.5212

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40 A25 V6 mOhmsN - Channel 1.2 V- 55 C+ 150 C2.1 WSMD/SMTTSDSON - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V1.9 nCEnhancement  
FQD17N08LTM


Fairchild Semiconductor MOSFET 80V N-Channel QFET Logic Level
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ON Semiconductor 0
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AUD 0.5213

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12.9 A80 V100 mOhmsN - Channel20 V - 55 C+ 150 C2.5 WSmd/SmtDPAK - 2ReelSi1 Channel20 V Enhancement  
BUK9Y153-100E


MOSFET, N-CH, 100V, 9.4A, LFPAK
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AUD 0.5214

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   N Channel               
SVF6N60F


MOSFET N Trench 600V 6A 4V @ 250uA 1.5 Ω @ 3A,10V TO-220F (TO-220IS) RoHS
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Silan 0
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AUD 0.5214

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IRFR48ZPBF


Transistor: N-MOSFET; unipolar; 55V; 62A; 91W; DPAK
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Infineon 0
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AUD 0.5215

Multiples of: 962

62 A55 V11 mOhmsN - Channel 4 V- 55 C+ 175 C91 WSmd/SmtDPAKTubeSi1 Channel20 V40 nCEnhancement  
LNC06R140


MOSFET N Channel 60V 45A(Tc) 1.9V @ 250uA 15mO @ 10A,4.5V TO-220 RoHS
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Lonten Semiconductor 0
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AUD 0.5216

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