MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF7410GTRPBF


MOSFET MOSFT PCh -12V -16A 7mOhm 91nC
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Infineon 0
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AUD 0.5195
Multiples of: 1

16 A12 V7 mOhmsp - channel 900 mV + 150 C2.5 Wsmd/smtSOIC - 8Reelsi1 channel 91 nC   
IRF7413ZPBF


International Rectifier MOSFET 30V 1 N-CH HEXFET 10mOhms 9.5nC
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Infineon 0
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AUD 0.5196
Multiples of: 1

13 A30 V13 mOhmsN - Channel20 V - 55 C+ 150 C2.5 WSmd/SmtSOIC - 8TubeSi1 Channel20 V9.5 nCEnhancement  
FDS4410A


Fairchild Semiconductor MOSFET LOGIC LEVEL PO SINGLE NCH
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ON Semiconductor 0
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AUD 0.5196
Multiples of: 1

10 A30 V13.5 mOhmsn - channel  - 55 C+ 150 C2.5 Wsmd/smtSOIC - 8 NarrowReelsi1 channel20 V enhancement  
FQU2N60CTU


MOSFET 600V N-Channel Adv Q-FET C-Series
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ON Semiconductor 0
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AUD 0.5197
Multiples of: 1

1.9 A600 V4.7 Ohmsn - channel  - 55 C+ 150 C2.5 Wthrough holeTO - 251 - 3Tubesi1 channel30 V enhancement  
CS10N65P


MOSFET TO-220 RoHS
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AUD 0.5197
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BRD50P06


TO-252-2 MOSFETs ROHS
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AUD 0.5199
Multiples of: 5

                   
SI1065X-T1-E3


MOSFET 12V 1.18A 0.236W 130 mohms @ 4.5V
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Vishay 0
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AUD 0.52
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1.18 A- 12 V204 mOhmsp - channel8 V - 55 C+ 150 C236 mWsmd/smtSC - 89 - 6Reel    enhancement  
STQ1NE10L-AP


MOSFET
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STMicroelectronics 0
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AUD 0.52
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1 A100 V400 mOhmsn - channel16 V - 55 C+ 150 C3 Wthrough holeTO - 92 - 3Reel    enhancement  
STD7NS20T4


STMicroelectronics MOSFET N-Ch 200 Volt 7 Amp
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AUD 0.52
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7 A200 V350 mOhmsn - channel20 V - 65 C+ 150 C45 Wsmd/smtDPAK - 3Reel    enhancement  
SIB452DK-T1-GE3


Vishay Semiconductors MOSFET 190V 1.5A 13W 2.4ohm 4.5V
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Vishay 0
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AUD 0.52
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670 mA190 V2.4 OhmsN - Channel16 V - 55 C+ 150 C2.4 WSmd/SmtSC - 75 - 6Reel    Enhancement  
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