MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SP8M4-TB-VB


SOP-8 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.3817
Multiples of: 1

                   
AO4294


MOSFET N Trench 100V 11.5A 2.4V @ 250uA 12 mΩ @ 11.5A,10V SOIC-8_150mil RoHS
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Alpha & Omega 0
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AUD 0.3818
Multiples of: 1

                   
AOD425


MOSFET P CH 30V 50A TO252
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Alpha & Omega 0
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AUD 0.3818
Multiples of: 2500

           -       
NCE0117I


100V 17A 56mO@10V,5A 55W N Channel TO-251 MOSFETs ROHS
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NCE Power 0
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AUD 0.3819
Multiples of: 5

                   
RSR025N03FRATL


ROHM Semiconductor
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ROHM 0
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AUD 0.3819
Multiples of: 1

   N Channel               
CS4N65FA9HD


MOSFET N Trench 650V 4A (Tc) 4V @ 250uA 2.5 Ω @ 2A,10V TO-220F (TO-220IS) RoHS
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Huajing 0
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AUD 0.3821
Multiples of: 1

           Tube - Packed       
IPD50R650CEATMA1


Infineon Technologies MOSFET N-Ch 550V 19A DPAK-2
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Infineon 0
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AUD 0.3821
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19 A500 V650 mOhmsn - channel 3 V- 55 C+ 150 C47 Wsmd/smtTO - 252 - 3Reelsi1 channel30 V15 nC   
SSM3K341R,LXHF


MOSFET N Channel 60V 6A AECQ MOSFET
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AUD 0.3823
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6 A60 V36 mOhmsN - Channel 1.5 V- 55 C+ 175 C2.4 WSMD/SMTSOT - 23F - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V9.3 nCEnhancementAEC - Q101 
SIS612EDNT-T1-GE3


Vishay Semiconductors MOSFET N-Channel 20V
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AUD 0.3826
Multiples of: 1

         Smd/SmtPOWERPAK - 1212 - 8ReelSi     Trenchfet, Powerpak
SI5440DC-T1-GE3


Vishay Semiconductors MOSFET 30V 6.0A 6.3W 19mohm 10V
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Vishay 0
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AUD 0.3826
Multiples of: 1

6 A30 V19 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtCHIP - FET - 8ReelSi 20 V Enhancement Trenchfet
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