MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NCE30P28Q


MOSFET DFN3.3X3.3-8L RoHS
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NCE Power 4277
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AUD 0.3639
Multiples of: 5

                   
CS3N90F


MOSFET TO-220F RoHS
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Convert Semiconductor 0
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AUD 0.3801
Multiples of: 1

                   
CS50N06P


MOSFET TO-220 RoHS
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Convert Semiconductor 0
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AUD 0.3801
Multiples of: 1

                   
AP50P20Q


20V 50A 40W 6.6mΩ@4.5V,15A P Channel WDFN-8(3x3) MOSFETs ROHS
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Quan Li 0
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AUD 0.3801
Multiples of: 1

                   
FDMA410NZT


MOSFET Single PT4 Nch 20/8V zener in MLP2x2
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ON Semiconductor 0
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AUD 0.3803
Multiples of: 1

9.5 A20 V60 mOhmsN - Channel 400 mV- 55 C+ 150 C2.4 WSmd/SmtMICRO - FET - 6ReelSi1 Channel+/- 8 V10 nCEnhancement  
DMN2008LFU-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 0
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AUD 0.3804
Multiples of: 3000

         Smd/SmtU - DFN2030 - B - 6Cut TapeSi      
IRF840


MOSFET N Trench 500V 8A (Tc) 4V @ 250uA 850 mΩ @ 4.8A,10V TO-220 RoHS
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Blue Rocket 0
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AUD 0.4841
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RT1A050ZPTR


ROHM Semiconductor MOSFET P Chan-12V-5A Mid-PowerSwitching
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ROHM 0
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AUD 0.3805
Multiples of: 1

5 A- 12 V26 mOhmsP - Channel10 V - 55 C+ 150 C1.25 WSmd/SmtTSST - 8ReelSi1 Channel10 V Enhancement  
TSM60N03CP


MOSFET
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Taiwan Semiconductor 0
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AUD 0.3806
Multiples of: 1

60 A30 V3.5 mOhmsn - channel 1.15 V- 55 C+ 150 C41 Wsmd/smtTO - 252 - 3 si1 channel10 V12 nCenhancement  
SI3424BDV-T1-GE3


Vishay Semiconductors MOSFET 30V 8.0A 2.98W 28mohm 10V
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Vishay 0
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AUD 0.3806
Multiples of: 3000

8 A30 V28 mOhmsN - Channel  - 55 C+ 150 C2.1 WSmd/SmtTSOP - 6ReelSi 20 V Enhancement Trenchfet
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