MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMT2004UFV-13


MOSFET MOSFET BVDSS: 8V-24V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 0
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AUD 0.3769
Multiples of: 1

70 A24 V5 mOhmsN - Channel 0.55 V- 55 C+ 150 C2.3 WSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel12 V29.6 nCEnhancement  
NDS8434-NL-VB


SOP-8 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

VBsemi Elec 0
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AUD 0.3771
Multiples of: 5

                   
SIHFL014TR-GE3


MOSFET N-CHANNEL 60V
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Vishay 0
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AUD 0.3771
Multiples of: 1

2.7 A60 V200 mOhmsN - Channel 4 V- 55 C+ 150 C3.1 WSMD/SMTSOT - 223 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V11 nCEnhancement  
4N60L-B-TN3-R


MOSFET N Trench 600V 4A 4V @ 250uA 2.5 Ω @ 2.2A,10V TO-252-2 (DPAK) RoHS
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Unisonic 0
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AUD 0.3771
Multiples of: 1

                   
BUK7240-100A-HXY


100V 30A 35m 1PCSNChannel TO-252-2L MOSFETs ROHS
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HXY MOS 0
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AUD 0.3772
Multiples of: 1

                   
SE3205A


TO-220 MOSFETs ROHS
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SINO-IC 0
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AUD 0.3772
Multiples of: 1

                   
BSP126,135


N-Channel 250 V 375mA (Ta) 1.5W (Ta) Surface Mount SOT-223
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Nexperia 0
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AUD 0.3773
Multiples of: 1

375 mA250 V5 OhmsN - Channel  - 55 C+ 150 C1.5 WSmd/SmtSOT - 223 - 3ReelSi1 Channel20 V Enhancement  
BSC050N03LSGXT


Infineon Technologies MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3
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Infineon 0
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AUD 0.3614
Multiples of: 5000

80 A30 V4.2 mOhmsn - channel 1 V- 55 C+ 150 C50 Wsmd/smtTDSON - 8Reelsi1 channel20 V35 nCenhancement  
SSM6K819R,LF


MOSFETs
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Toshiba 0
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AUD 0.3646
Multiples of: 1

           ReelSi      
SI3443BDV-T1-BE3


MOSFET 2.5V P-CHANNEL (G-S)
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Vishay 0
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AUD 0.3776
Multiples of: 1

3.6 A20 V60 mOhmsP - Channel 1.4 V- 55 C+ 150 C1.1 WSMD/SMTTSOP - 6Reel , Cut TapeSi1 Channel- 12 V , + 12 V6 nCEnhancement  
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