MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSP315P H6327


Infineon Technologies MOSFET P-Ch -60V -1.17A SOT-223-3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 0.3612
Multiples of: 1

- 1.17 A- 60 V800 mOhmsP - Channel - 1.5 V- 55 C+ 150 C1.8 WSmd/SmtPG - SOT223Reel-1 Channel+/- 20 V5.2 nCEnhancement  
FCU5N60TU


MOSFET 600V N-Channel MOSFET
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ON Semiconductor 0
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AUD 0.3612
Multiples of: 1

4.6 A600 V810 mOhmsn - channel  - 55 C+ 150 C54 Wthrough holeTO - 220 - 3Bulksi1 channel30 V enhancement  
PHT6N06LT


MOSFET
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Nexperia 0
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AUD 0.3612
Multiples of: 1

   N Channel               
US5U2TR


Trans MOSFET N-CH 30V 1.4A 5-Pin TUMT T/R
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ROHM 0
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AUD 0.3457
Multiples of: 1

1.4 A30 V240 mOhmsn - channel    1 Wsmd/smtSOT - 353T - 5Tape And Reelsi1 channel20 V enhancement  
DMTH4008LFDFWQ-7R


MOSFETs MOSFET BVDSS: 31V 40V U-DFN2020-6 T&R 3K
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Diodes Incorporated 0
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AUD 0.3614
Multiples of: 1

11.6 A40 V18 mOhmsN - Channel 3 V- 55 C+ 175 C2.35 WSMD/SMTU - DFN2020 - 6Reel , Cut TapeSi1 Channel- 20 V , 20 V14.2 nCEnhancement  
DMN1032UCB4-7


Diodes Incorporated MOSFET 20V N-Ch Enh Mode FET 12V 8Vgss 0.9W
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Diodes Incorporated 0
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AUD 0.3614
Multiples of: 1

4.8 A12 V38 mOhmsn - channel 0.8 V- 55 C+ 150 C1.16 Wsmd/smtU - WLB1010 - 4Reelsi1 channel8 V3.2 nCenhancement dmn10
FQU13N06LTU-WS


Trans MOSFET N-CH 60V 11A 3-Pin(3+Tab) IPAK Rail
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ON Semiconductor 0
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AUD 0.3615
Multiples of: 5040

11 A60 V115 mOhmsN - Channel  - 55 C+ 150 C2.5 WThrough HoleTO - 251 - 3TubeSi1 Channel20 V Enhancement  
IPU60R1K5CEBKMA1


MOSFET N-Ch 600V 3.1A IPAK-3
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Infineon 0
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AUD 0.3615
Multiples of: 1

3.1 A600 V1.5 Ohmsn - channel 2.5 V- 40 C+ 150 C28 Wthrough holeTO - 251 - 3Tubesi1 channel20 V9.4 nCenhancement coolmos
AP3P010YT


PMPAK-8(3x3) MOSFETs ROHS
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APEC 0
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AUD 0.3616
Multiples of: 5

                   
UF830L-TN3-R


MOSFET N Trench 500V 4.5A 4V @ 250uA 1.5 Ω @ 2.5A,10V TO-252-2 (DPAK) RoHS
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Unisonic 0
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AUD 0.3617
Multiples of: 1

                   
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