MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PJW1NA60A_R2_00001


MOSFET /1NA60A/TR/13"/HF/2.5K/SOT-223/MOS/SOT/NFET-600TWMN/NF600-QI41/PJ/SOT223-AS05/SOT223-AS06/SOT223-AS09
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Panjit 0
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AUD 0.3638
Multiples of: 1

400 mA600 V7.9 OhmsN - Channel 4 V- 55 C+ 150 C3.3 WSMD/SMTSOT - 223 - 3Reel , Cut TapeSi1 Channel- 30 V , + 30 V3.1 nCEnhancement  
DMT6015LFVW-7


MOSFET MOSFET BVDSS: 41V 60V PowerDI3333-8SWP T&R 2K
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 0
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AUD 0.3638
Multiples of: 1

           Cut Tape       
RT1A045APTCR


MOSFET 1.5V Drive Pch MOSFET
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ROHM 0
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AUD 0.3638
Multiples of: 1

4.5 A12 V22 mOhmsP - Channel 1 V- 55 C+ 150 C1.25 WSmd/SmtTSST - 8ReelSi1 Channel- 8 V40 nCEnhancement  
IRFNL210BTA_FP001


Fairchild Semiconductor MOSFET 200V N-CHAN
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ON Semiconductor 0
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AUD 0.3638
Multiples of: 1

1 A200 V1.5 Ohmsn - channel  - 55 C+ 150 C3.1 Wthrough holeTO - 92 - 3Ammo Packsi1 channel30 V enhancement  
DMP6110SVT-13


MOSFET 60V Dual P-Ch Enh FET 60Vds 20Vgs
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Diodes Incorporated 0
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AUD 0.3638
Multiples of: 10000

- 7.3 A- 60 V105 mOhmsp - channel - 3 V- 55 C+ 150 C1.2 Wsmd/smtTSOT26 - 6Reelsi1 channel+/- 20 V17.2 nCenhancement  
FDC6392S


Fairchild Semiconductor MOSFET 20V P-Ch PowerTrench Integrated
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ON Semiconductor 0
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AUD 0.3638
Multiples of: 1

- 2.2 A- 20 V150 mOhmsp - channel  - 55 C+ 150 C960 mWsmd/smtSSOT - 6Reelsi1 channel12 V enhancement powertrench
KF4N60F-U/PSF


MOSFET N Trench 600V 4A (Tc) 4.5V @ 250uA 2.5 Ω @ 2A,10V TO-220IS (1) RoHS
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KEC 0
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AUD 0.3639
Multiples of: 1

                   
FDS6575


20V 13A 15mO@4.5V,13A P Channel SO-8 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.3639
Multiples of: 5

                   
SIB437EDKT-T1-GE3


MOSFET 8V 9A 13W 34MOHMS @ 4.5V
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Vishay 0
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AUD 0.3639
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   p - channel     smd/smtSC - 75 - 6Reelsi     trenchfet, powerpak
BUK9840-55/CUX


MOSFET N-channel TrenchMOS logic level FET
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NXP 0
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AUD 0.364
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10.7 A55 V40 mOhmsn - channel 1 V- 55 C+ 150 C8.3 Wsmd/smtSOT - 223 - 4Reelsi1 channel5 V enhancement  
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