MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQ2308CES-T1-GE3


Vishay Siliconix MOSFET 60V 2.3A 2watt N-CH Automotive
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Vishay 0
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AUD 0.3021
Multiples of: 38

2.3 A60 V136 mOhmsN - Channel 2 V- 55 C+ 175 C2 WSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V3.5 nCEnhancementAec - Q101Trenchfet
NVD5807NT4G-VF01


MOSFET NFET DPAK 40V 23A 31MOHM
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 0.3022
Multiples of: 2500

23 A40 V31 mOhmsN - Channel 1.4 V- 55 C+ 175 C33 WSmd/SmtDPAK - 3Cut TapeSi1 Channel20 V20 nCEnhancementAec - Q101 
PMDPB85UPE,115


NXP Semiconductors MOSFET
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Nexperia 0
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AUD 0.3022
Multiples of: 1

3.7 A20 V82 mOhms , 82 mOhmsp - channel 950 mV- 55 C+ 150 C1.17 Wsmd/smtDFN2020 - 6Reelsi2 channel8 V8.1 nC , 8.1 nCenhancement  
NVD3055L170T4G


MOSFET NFET DPAK 60V .170R TR
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ON Semiconductor 0
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AUD 0.3023
Multiples of: 2500

9 A60 V153 mOhmsn - channel15 V1.7 V- 55 C+ 175 C28.5 Wsmd/smtDPAK - 2Reelsi1 channel15 V4.7 nC aec - q101 
2N7002VA-7


Diodes Incorporated MOSFET 60V 150mW
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Diodes Incorporated 0
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AUD 0.3024
Multiples of: 1

115 mA60 V13.5 Ohmsn - channel  - 55 C+ 150 C150 mWsmd/smtSOT - 563 - 6Reelsi2 channel20 V enhancement  
SM6103PSUC-TRG


TO-252-2 MOSFETs ROHS
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Sinopower 0
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AUD 0.3024
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TPC8227-H,LQ


MOSFET PWR MOSFET PD=1.5W F=1MHZ
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Toshiba 0
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AUD 0.3025
Multiples of: 1

5.1 A40 V33 OhmsN - Channel 1.3 V- 55 C+ 150 C1.5 WSmd/SmtSOP - 8Cut TapeSi1 Channel10 V10 nCEnhancement U - Mosvi - H
SI9426DY-T1-E3-VB


20V 12A 12m@10V,12A 1PCSNChannel SO-8 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.3026
Multiples of: 5

                   
NP1045G


100V 45A 14mΩ@10V,40A 85W 1.75V@250uA 11pF@50V N Channel 1600pF@50V 26nC@10V -55℃~+150℃@(Tj) TO-252-2L MOSFETs ROHS
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NATLINEAR 0
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AUD 0.3028
Multiples of: 1

                   
SWP088R08E8T


80V 80A TO-220 MOSFETs ROHS
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Sam&wing 0
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AUD 0.3028
Multiples of: 5

                   
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