MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFZ44N


60V 50A 18m 130W TO-220 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

OSEN 0
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AUD 0.301
Multiples of: 5

                   
IRF6726MTR1PBF


MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
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Infineon 0
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AUD 0.3012
Multiples of: 1

180 A30 V2.4 mOhmsn - channel    89 Wsmd/smtDirectfet - MTReelsi1 channel20 V51 nC   
SQ3469EV-T1_GE3


MOSFET 20V 8A 5W AEC-Q101 Qualified
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Vishay 0
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AUD 0.3012
Multiples of: 3000

- 8 A- 20 V36 mOhmsP - Channel - 2 V- 55 C+ 175 C5 WSmd/SmtTSOP - 6ReelSi1 Channel20 V17.7 nCEnhancementAec - Q101Trenchfet
CRTT084NE6N


MOSFET N Channel 68V 81A(Tc) 4V @ 250uA 8.4mO @ 40A,10V TO-220 RoHS
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AUD 0.3013
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IRFSL9N60APBF


N-Channel 600 V 9.2A (Tc) 170W (Tc) Through Hole I2PAK
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Vishay 0
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AUD 0.3014
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   n - channel  - 55 C+ 150 C through holeTO - 262Tubesi      
SI4431DY-T1-E3-VB


30V 6A 40mΩ@10V 1PCSPChannel SOP-8 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.3015
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TTG90P03ATC


DFN-8-EP(3x3) MOSFETs ROHS
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UNIGROUP 0
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AUD 0.3015
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TSD10N06AT


MOSFET TO-252 RoHS
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AUD 0.3015
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P06P03LDG


MOSFET P Trench 30V 12A (Tc) 3V @ 250uA 75 mΩ @ 10A,4.5V TO-252-2 (DPAK) RoHS
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NIKO 0
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AUD 0.3017
Multiples of: 1

                   
SE15N50FRA


TO-220 MOSFETs ROHS
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SINO-IC 0
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AUD 0.3017
Multiples of: 5

                   
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