MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PMPB27EPZ


MOSFETs PMPB27EP/SOT1220/SOT1220
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Nexperia 2900
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AUD 0.1839
Multiples of: 1

8.8 A30 V29 mOhmsP - Channel 2.5 V- 55 C+ 150 C1.7 WSMD/SMTDFN - 2020MD - 6Reel , Cut TapeSi1 Channel- 20 V , + 20 V30 nCEnhancement  
BSP250,115


P-Channel 30 V 3A (Tc) 1.65W (Ta) Surface Mount SOT-223
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Nexperia 0
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AUD 0.205
Multiples of: 1000

3 A30 V330 mOhmsP - Channel  - 65 C+ 150 C5 WSmd/SmtSOT - 223ReelSi1 Channel20 V10 nCEnhancement  
BSP250,135


P-Channel 30 V 3A (Tc) 1.65W (Ta) Surface Mount SOT-223
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Nexperia 0
6 to 16 Weeks Calender.png

AUD 0.205
Multiples of: 4000

3 A30 V250 mOhmsP - Channel 1 V- 65 C+ 150 C1.65 WSmd/SmtSOT - 223ReelSi1 Channel- 10 V10 nCEnhancement  
LNL04R075


MOSFET N Channel 40V 18A 2V @ 250uA 7.5mO @ 10A,10V SOP-8 RoHS
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Lonten Semiconductor 0
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AUD 0.2052
Multiples of: 1

                   
ASDM30P11TD-R


30V 55A 6.4mΩ@10V,20A 31.2W 1.8V@250uA 309pF@15V P Channel 3.482nF@15V 61nC@10V -55℃~+150℃@(Tj) PDFN-8(3x3) MOSFETs ROHS
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Ascend 0
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AUD 0.2052
Multiples of: 5

                   
SSM6J414TU,LF


Toshiba MOSFET P-Ch U-MOS VI FET ID -6A -20V 1650pF
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Toshiba 0
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AUD 0.2052
Multiples of: 3000

- 6 A- 20 V54 mOhmsp - channel8 V- 0.3 v to - 1 V- 55 C+ 150 C1 Wsmd/smtUF - 6Reelsi1 channel8 V23.1 nC   
IRF5852TRPBF-VB


20V 4.8A 22m@4.5V 1PCSNChannel SOT-23-6 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.2053
Multiples of: 5

                   
SIA418DJ-T1-GE3


MOSFET 30V 12A 19W 18mohm @ 10V
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Vishay 0
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AUD 0.2053
Multiples of: 51

   n - channel     smd/smtSC - 70 - 6LReelsi     trenchfet
HD830L


TO-252 MOSFETs ROHS
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Haolin 0
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AUD 0.2054
Multiples of: 5

                   
MTM763200LBF


Panasonic MOSFET SC, NchPch MOS FET Dual, DCDC Converter
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Panasonic 0
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AUD 0.2055
Multiples of: 1

1.9 A , 1.2 A20 V80 mOhms , 100 mOhmsn - channel, p - channel 400 mV , 1.3 V- 40 C+ 85 C700 mWsmd/smtWS - M in I - 6Reelsi2 channel10 V enhancement  
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