MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RTF010P02TL


ROHM Semiconductor MOSFET P-CH 20V 1A TUMT3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 0
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AUD 0.206

Multiples of: 3000

1 A- 20 V280 mOhmsp - channel12 V - 55 C+ 150 C800 mWsmd/smtTUMT - 3Reelsi1 channel12 V enhancement  
PMN70XPX


MOSFET PMN70XP/SC-74/REEL 7" Q1/T1 *S
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Nexperia 0
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AUD 0.206

Multiples of: 1

           Cut TapeSi      
PXN014-60QLAJ


MOSFETs N-channel 60 V, 14 mOhm, logic level Trench MOSFET in MLPAK33
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Nexperia 0
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AUD 0.206

Multiples of: 1

39 A60 V14 mOhmsN - Channel 2.2 V- 55 C+ 150 C43 WSMD/SMTMLPAK33 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V5.9 nCEnhancement  
HSU12N10


MOSFET N Channel 100V 12A 2.5V @ 250uA 105mΩ @ 5A,10V TO-252 RoHS
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HUASHUO 0
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AUD 0.2061

Multiples of: 1

                   
DMC2700UDM-7


20V 4.2A 36mO@4.5V,4.2A 1PCSN-Channel&1PCSP-Channel TSOP-6-1.5mm MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.2064

Multiples of: 5

                   
715123AB


2N7000 S.S NCH TMOS FE* T/HOLE
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ON Semiconductor 0
Ships to you
by Wed. 26 Aug
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AUD 0.2064

Multiples of: 1

200 mA60 V1.2 OhmsN - Channel20 V - 55 C+ 150 C400 mWThrough HoleTO - 92 - 3Bulk    Enhancement  
IPP037N06L3 G


MOSFET OptiMOS 3 PWR TRANST 60V 90A
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Infineon 0
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AUD 0.2064

Multiples of: 1

90 A60 V3.7 mOhmsn - channel  - 55 C+ 175 C167 Wthrough holeTO - 220Tubesi1 channel20 V enhancement optimos
CES2324


MOSFET N Trench 20V 4.2A 1.5V @ 250uA 45 mΩ @ 4.2A,4.5V SOT-23 (SOT-23-3) RoHS
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Chino-Excel 0
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AUD 0.2066

Multiples of: 5

                   
SVF2N60F


MOSFET N Trench 600V 2A (Tc) 4V @ 250uA 4.2 Ω @ 1A,10V TO-220F RoHS
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Silan 0
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AUD 0.2066

Multiples of: 5

                   
SIS478DN-T1-GE3


MOSFET 30V Vds 25V Vgs PowerPAK 1212-8
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Vishay 0
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AUD 0.2066

Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8ReelSi     Trenchfet, Powerpak
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