MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SP010N35NK


PDFN-8L(5x6) MOSFETs ROHS
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Siliup 14
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AUD 0.1241
Multiples of: 5

                   
SDM100PL06SV


SOT-23 MOSFETs ROHS
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SINEDEVICE 0
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AUD 0.1241
Multiples of: 5

                   
SM2300NSAC-TRG


MOSFET N Trench 20V 6A 1V @ 250uA 25 mΩ @ 6A,10V SOT-23 (SOT-23-3) RoHS
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Sinopower 0
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AUD 0.1241
Multiples of: 5

                   
DMC2038LVT-7


MOSFET MOSFET BVDSS: 8V-24V 8V-24V,TSOT23,3K
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Diodes Incorporated 0
6 to 16 Weeks Calender.png

AUD 0.1242
Multiples of: 3000

4.5 A , 3.1 A20 V35 mOhms , 74 mOhmsN - Channel, P - Channel 400 mV- 55 C+ 150 C1.1 WSmd/SmtTSOT - 26 - 6Cut TapeSi2 Channel4.5 V12 nC , 14 nCEnhancement  
2N7002PV


MOSFET, NN CH, 60V, 0.35A, SOT666
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Nexperia 0
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AUD 0.1242
Multiples of: 1

   N Channel               
PMZB1200UPE


MOSFET, P-CH, -30V, -0.41A, SOT-883B-3
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Nexperia 0
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AUD 0.1242
Multiples of: 1

   P Channel               
SSM3K347R,LF


MOSFET LowON Res MOSFET ID=2A VDSS=38V
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Toshiba 0
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AUD 0.1244
Multiples of: 1

2 A38 V280 mOhmsN - Channel 1.4 V + 150 C1 WSmd/SmtSOT - 23F - 3Cut TapeSi1 Channel20 V2.5 nCEnhancement  
DMG7430LFG-HXY


30V 50A 7.5m 1PCSNChannel DFN-8L(3x3) MOSFETs ROHS
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HXY MOS 0
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AUD 0.1245
Multiples of: 5

                   
PMGD370XN,115


MOSFET N-CH TRENCH DL 30V
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NXP 0
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AUD 0.1246
Multiples of: 3000

740 mA30 V370 mOhmsn - channel12 V - 55 C+ 150 C410 mWsmd/smtSOT - 363 - 6Reel    enhancement  
SED2145


MOSFET P Trench 12V 12A 1V @ 250uA 18.9 mΩ @ 10A,4.5V DFN 2x2-6L RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SINO-IC 0
6 to 16 Weeks Calender.png

AUD 0.1246
Multiples of: 5

                   
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