MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN31D5UFZ-7B


Diodes Incorporated MOSFET 30V N-Ch Enh Mode FET 12Vgss 1.05W
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 7430
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AUD 0.129
Multiples of: 5

220 mA30 V4.5 OhmsN - Channel 1 V- 55 C+ 150 C393 mWSmd/SmtX2 - DFN0606 - 3ReelSi1 Channel12 V0.35 nCEnhancement Dmn31
1N60L-T92-K


MOSFET N Trench 600V 1.2A 4V @ 250uA 11.5 Ω @ 600mA,10V TO-92 (TO-92-3) RoHS
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Unisonic 0
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AUD 0.1231
Multiples of: 5

                   
DMN5L06VAK-7


50V 280mA 2O@5V,50mA 250mW 2 N-Channel SOT-563 MOSFETs ROHS
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Diodes Incorporated 0
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AUD 0.1232
Multiples of: 3000

280 mA50 V2 OhmsN - Channel  - 55 C+ 150 C250 mWSmd/SmtSOT - 563 - 6ReelSi2 Channel20 V Enhancement  
AGM30P20D


30V 18A 28W 15.5m@10V,10A 1PCSPChannel TO-252 MOSFETs ROHS
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AGM-Semi 0
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AUD 0.1232
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NTS4101PT1G


20V 3.1A 80mO@4.5V,1.4A 500mW P Channel SC-70-3 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.1233
Multiples of: 5

                   
NP45N03QR


30V 45A 28W 6.3mΩ@10V,45A 1.6V@250uA 131pF@20V N Channel 1317pF@20V 12.6nC@4.5V -55℃~+150℃@(Tj) PDFN3x3-8L MOSFETs ROHS
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NATLINEAR 0
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AUD 0.1234
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PJA3417


MOSFET P Trench 20V 5.2A 900mV @ 250uA 35 mΩ @ 5.2A,4.5V SC-59 RoHS
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Panjit 0
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AUD 0.1234
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DMN62D1LFB-7B


MOSFET MOSFET BVDSS: 41V~60V X1-DFN1006-3 T&R 10K
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Diodes Incorporated 0
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AUD 0.1234
Multiples of: 10000

320 mA60 V2 OhmsN - Channel 600 mV- 55 C+ 150 C0.5 WSmd/SmtX1 - DFN1006 - 3Cut TapeSi1 Channel20 V0.9 nCEnhancement  
KNY3903A


DFN5x6 MOSFETs ROHS
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KIA 0
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AUD 0.1234
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SSM3J327R,LF(B


Transistor: P-MOSFET; unipolar; -20V; -3.9A; 1W; SOT23F
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Toshiba 0
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AUD 0.124
Multiples of: 5

                   
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