MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FQPF10N90C-VB


TO-220F MOSFETs ROHS
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VBsemi Elec 3
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AUD 3.2726
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IPB065N10N3 G


MOSFET N Trench 100V 80A (Tc) 3.5V @ 90uA 6.5 mΩ @ 80A,10V TO-263-2 RoHS
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Infineon 3
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AUD 3.3407
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STF33N60M2-VB


600V 26A 115mΩ@10V 4.5V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 3
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AUD 3.3611
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IPP037N06L3GXKSA1


Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO220-3
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Infineon 3
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AUD 3.7478
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            optimos 3      
IPC100N04S5L1R5ATMA1


MOSFET N-CHANNEL 30/40V
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Infineon 3
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AUD 4.2368
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           Cut TapeSi    Aec - Q101 
IRFHM8363TRPBF


Mosfet Array 2 N-Channel (Dual) 30V 11A 2.7W Surface Mount 8-PQFN (3.3x3.3), Power33
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Infineon 3
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AUD 4.4459
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11 A30 V16.3 mOhmsN - Channel20 V1.8 V- 55 C+ 150 C2.7 WSmd/SmtDPQFN - 8ReelSi2 Channel20 V15 nC   
NTPF095N65S3H-VB


650V 32A 85m@10V 4.5V 1 N-Channel TO-220F MOSFETs ROHS
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VBsemi Elec 3
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AUD 4.2013
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FDMS4D4N08C


Transistor: N-MOSFET; unipolar; 80V; 78A; Idm: 498A; 125W; Power56
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ON Semiconductor 3
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AUD 4.5314
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            PowerTrench®      
FCP099N60E-VB


600V 32A 85m@10V 4.5V 1 N-Channel TO-220AB MOSFETs ROHS
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VBsemi Elec 3
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AUD 4.3127
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STF42N65M5-VB


650V 36A 75mΩ@10V 4.5V 1PCSNChannel TO-247 MOSFETs ROHS
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VBsemi Elec 3
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AUD 4.775
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