MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPW65R075CFD7A-VB


650V 41A 62m@10V 4.5V 1PCSNChannel TO-247 MOSFETs ROHS
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VBsemi Elec 3
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AUD 6.6271
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ALD110900PAL


MOSFET Dual EPAD(R) N-Ch
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Advanced Linear Devices 3
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AUD 6.9284
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12 mA10 V500 Ohms , 500 OhmsN - Channel 20 mV0 C+ 70 C500 mWThrough HolePDIP - 8TubeSi2 Channel10.6 V Depletion  
IRFS3004TRLPBF


Trans MOSFET N-CH 40V 340A 3-Pin(2+Tab) D2PAK T/R
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Infineon 3
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AUD 7.0919
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340 A40 V1.4 mOhmsN - Channel 4 V- 55 C+ 175 C380 WSmd/SmtD2PAKReelSi1 Channel20 V160 nC   
IPP60R120P7


Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3
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Infineon 3
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AUD 7.2801
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            Coolmos P7      
IPL60R285P7


MOSFET LOW POWER_NEW
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Infineon 3
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AUD 7.3543
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NTE2374


Transistor: N-MOSFET; 200V; 18A; TO220
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NTE 3
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AUD 7.5224
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IXFH96N15P


MOSFET 96 Amps 150V 0.024 Rds
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IXYS 3
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AUD 7.5851
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96 A150 V24 mOhmsn - channel  - 55 C+ 175 C480 Wthrough holeTO - 247 - 3Tubesi1 channel20 V enhancement hiperfet
NTE2995


Transistor: N-MOSFET; 600V; 10A; TO220
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NTE 3
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AUD 8.609
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TP2640N3-G


Transistor: P-MOSFET; unipolar; -400V; -0.7A; 1W; TO92
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Microchip 3
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AUD 8.7315
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180 mA400 V15 OhmsP - Channel  - 55 C+ 150 C1 WThrough HoleTO - 92BulkSi1 Channel20 V Enhancement  
MS9N150HGC0


1.5kV 9A 2.2@10V,4A 350W 5V@250A 1 N-Channel TO-247 MOSFETs ROHS
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MASPOWER 3
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AUD 8.5135
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