MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2SJ338-VB


TO-252 MOSFETs ROHS
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VBsemi Elec 3
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AUD 1.3871
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4N0403 TO252-VB


40V 3.5m@10V 3.3V 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 3
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AUD 1.4931
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HSP6113


60V 17A 52.1W 90mΩ@10V,12A 2.5V@250uA P Channel TO-220 MOSFETs ROHS
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HUASHUO 3
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AUD 1.5193
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NVTFS5C478NLTAG


MOSFET AFSM T6 40V LL U8FL
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ON Semiconductor 3
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AUD 1.5646
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26 A40 V11.5 mOhmsN - Channel 1.2 V- 55 C+ 175 C20 WSmd/SmtWDFN - 8Cut TapeSi1 Channel20 V3.8 nCEnhancementAec - Q101 
SE80130GA


MOSFET N Trench 80V 130A 4.5V @ 250uA 4.3 mΩ @ 60A,10V TO-220 RoHS
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SINO-IC 3
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AUD 1.6117
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SQM100N10-10-GE3-VB


100V 110A 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 3
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AUD 1.6127
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IRF4905STRPBF-VB


60V 1PCSPChannel TO-263 MOSFETs ROHS
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VBsemi Elec 3
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AUD 1.6166
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AON6260-VB


60V 80A 6m@10V 1PCSNChannel DFN-8(5x6) MOSFETs ROHS
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VBsemi Elec 3
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AUD 1.6166
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SI7478DP-T1-GE3-VB


QFN8(5X6) MOSFETs ROHS
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VBsemi Elec 3
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AUD 1.6198
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STFH18N60M2


MOSFET N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
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STMicroelectronics 3
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AUD 1.704
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13 A600 V255 mOhmsN - Channel 2 V- 55 C+ 150 C25 WThrough HoleTO - 220FP - 3TubeSi1 Channel+/- 25 V21.5 nCEnhancement Mdmesh
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