MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PSMN4R1-60YLX


MOSFET PSMN4R1-60YL/LFPAK/REEL 7" Q1/
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Nexperia 4368
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AUD 1.0278
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           Cut TapeSi      
Hot IRFD9110PBF


MOSFET P-Chan 100V 0.7 Amp
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Vishay 3
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AUD 0.9897
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700 mA100 V1.2 OhmsP - Channel 2 V- 55 C+ 150 C1.3 WThrough HoleHEXDIP - 4TubeSi1 Channel- 10 V8.7 nCEnhancement  
SIS176LDN-T1-GE3


MOSFET N-CHANNEL 70-V (D-S)
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Vishay 3
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AUD 1.0572
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42.3 A70 V10.9 mOhmsN - Channel 1.6 V- 55 C+ 150 C39 WSMD/SMTPOWERPAK 1212 - 8Cut Tape , ReelSi1 Channel- 12 V , + 12 V12.6 nCEnhancement TrenchFET
DMHC4035LSD-13


Diodes Incorporated MOSFET 30V Comp H-Bridge ENH FET 20VGS
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Diodes Incorporated 3
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AUD 1.0079
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- 2.9 A , 4 A- 40 v , 40 V58 mOhms , 100 mOhmsN - Channel, P - Channel - 1 v , 3 V- 55 C+ 150 C1.5 WSmd/SmtSO - 8Reel-4 Channel+/- 20 V11.1 nC , 12.5 nCEnhancement  
TSM80N08CZ-VB


80V 28.6A 5W 7m@10V,15A 3.5V@250uA TO-220AB MOSFETs ROHS
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VBsemi Elec 3
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AUD 1.0171
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AP9990GIF-HF-VB


60V 120A 5m@10V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 3
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AUD 1.0171
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DMTH6016LFDFWQ-7R


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 3
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AUD 1.0415
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9.4 A60 V18 mOhmsN - Channel 1 V- 55 C+ 175 C2.3 WSmd/SmtU - DFN2020 - 6Cut TapeSi1 Channel20 V15.3 nCEnhancementAec - Q101 
ZVN4306GTA


60V 2.1A 330mO@10V,3A 3W N Channel SOT-223 MOSFETs ROHS
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Diodes Incorporated 3
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AUD 1.0498
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2.1 A60 V330 mOhmsN - Channel 1.3 V- 55 C+ 150 C3 WSmd/SmtSOT - 223ReelSi1 Channel10 V Enhancement  
IRF840S-VB


650V 10A 1.1Ω@10V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 3
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AUD 1.056
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SI7116DN-T1-GE3-VB


40V 40A 1PCSNChannel DFN-8(3x3) MOSFETs ROHS
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VBsemi Elec 3
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AUD 1.0562
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