MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CSD23280F3T


MOSFET -12-V, P channel NexFET power MOSFET, single LGA 0.6 mm x 0.7 mm, 116 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
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Texas Instruments 392
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between Fri. 04 Sep to Wed. 09 Sep
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AUD 0.1421

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1.8 A- 12 V399 mOhmsP - Channel - 950 mV- 55 C+ 150 C500 mWSmd/SmtQFN - 3ReelSi1 Channel- 6 V0.95 nCEnhancement Picostar
DMN2400UFB4-7


N-Channel 20 V 750mA (Ta) 470mW (Ta) Surface Mount X2-DFN1006-3
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Diodes Incorporated 4
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between Fri. 04 Sep to Wed. 09 Sep
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AUD 0.1406

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750 mA20 V550 mOhmsN - Channel 500 mV- 55 C+ 150 C0.47 mWSmd/SmtX2 - DFN1006 - 3Cut TapeSi1 Channel4.5 V0.5 nCEnhancement  
HM8810A


20V 6A 24mO@4.5V,6A 2 N-Channel SOT-23-6 MOSFETs ROHS
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VBsemi Elec 4
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AUD 0.1342

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DMN53D0U-13


MOSFETs N-CHANNEL MOSFET
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Diodes Incorporated 4
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AUD 0.1458

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2N7002DWQ-7-F


Diodes Incorporated MOSFET 60V Dual N-Ch Enh 7.5Ohm 5V Vgs 0.23A
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Diodes Incorporated 4
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between Fri. 04 Sep to Wed. 09 Sep
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AUD 0.1463

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230 mA60 V7.5 OhmsN - Channel 1 V- 55 C+ 150 C0.4 WSmd/SmtSOT - 363 - 6ReelSi2 Channel5 V EnhancementAec - Q101 
DMP31D7LDW-13


MOSFETs MOSFET BVDSS: 25V-30V SOT363 T&R 10K
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Diodes Incorporated 4
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between Fri. 04 Sep to Wed. 09 Sep
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AUD 0.1487

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VBTA3230NS


MOSFET 2 N Channel(Double) 20A 600mA 1V @ 250uA 300mO @ 500mA,4.5V SC-89 RoHS
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VBsemi Elec 4
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between Fri. 04 Sep to Wed. 09 Sep
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AUD 0.1588

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JMTK3003A


TO-252-2 MOSFETs ROHS
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JieJie 4
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between Fri. 04 Sep to Wed. 09 Sep
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AUD 0.1523

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100N03


TO-252 MOSFETs ROHS
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GOODWORK 4
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between Fri. 04 Sep to Wed. 09 Sep
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AUD 0.1533

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NCE0106Z


MOSFET N Trench 100V 6A 2.5V @ 250uA 140 mΩ @ 5A,10V TO-92 (TO-92-3) RoHS
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NCE Power 4
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between Fri. 04 Sep to Wed. 09 Sep
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AUD 0.1533

Multiples of: 5

                   
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