MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
20P03-HXY


30V 20A 29W 39mΩ@10V,15A P Channel TO-252-2L MOSFETs ROHS
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HXY MOS 4
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AUD 0.1197
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YFW4406AS


SOP-8 MOSFETs ROHS
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YFW Electronics 4
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AUD 0.1284
Multiples of: 5

                   
DMP2066LDM-7


P-Channel 20 V 4.6A (Ta) 1.25W (Ta) Surface Mount SOT-26
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Diodes Incorporated 4
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AUD 0.1223
Multiples of: 5

4.6 A20 V40 mOhmsp - channel  - 55 C+ 150 C1.25 Wsmd/smtSOT - 26 - 6Cut Tapesi1 channel12 V enhancement  
TMN3050DF


PDFN3x3-8L MOSFETs ROHS
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Tritech-MOS 4
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AUD 0.1223
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PJA3415A_R1_00001


MOSFET 30V P-Channel Enhancement Mode MOSFET
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Panjit 4
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AUD 0.1227
Multiples of: 5

                   
NX6020CAKSX


MOSFET NX6020CAKS/SOT363/SC-88
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Nexperia 4
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AUD 0.1233
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CJL6602


MOSFET SOT-23-6L(12R) RoHS
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Changjing Electronics Technology 4
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AUD 0.1239
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DMN61D9UWQ-7


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 4
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AUD 0.1249
Multiples of: 5

340 mA60 V1.2 OhmsN - Channel 500 mV- 55 C+ 150 C440 mW   Si1 Channel5 V400 pCEnhancementAec - Q101 
AM9435SA


MOSFET P Trench 30V 5.2A 3V @ 250uA 60 mΩ @ 5.2A,10V SOP-8_150mil RoHS
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Axelite 4
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AUD 0.1257
Multiples of: 5

                   
G28N03D3


30V 28A 8mΩ@10V,16A 20.5W 1.5V@250uA 144pF@15V N Channel 891pF@15V 15nC@10V -55℃~+150℃@(Tj) DFN3x3-8L MOSFETs ROHS
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GOFORD 4
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AUD 0.1257
Multiples of: 5

                   
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