MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TPS1120DR


Mosfet Array 2 P-Channel (Dual) 15V 1.17A 840mW Surface Mount 8-SOIC
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Texas Instruments 5
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between Fri. 04 Sep to Wed. 09 Sep
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AUD 9.2215

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1.17 A15 V180 mOhmsP - Channel  - 40 C+ 125 C840 mWSmd/SmtSOIC - 8ReelSi2 Channel- 15 v , 2 V Enhancement  
TK35N65W,S1F


Trans MOSFET N-CH Si 650V 35A 3-Pin(3+Tab) TO-247 Tube
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Toshiba 5
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between Thu. 27 Aug to Mon. 31 Aug
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AUD 9.9295

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35 A650 V68 mOhmsn - channel 3.5 V- 55 C+ 150 C270 Wthrough holeTO - 247 - 3 si1 channel30 V100 nCenhancement  
NTE2919


Transistor: P-MOSFET; 60V; 20A; TO220
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NTE 5
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between Fri. 21 Aug to Thu. 27 Aug
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AUD 10.5731

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NTMT064N65S3H


MOSFET 650V 64MOHM MOSFET
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ON Semiconductor 5
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between Fri. 04 Sep to Wed. 09 Sep
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AUD 11.2294

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40 A650 V64 mOhmsN - Channel 4 V- 55 C+ 150 C260 WSMD/SMTTDFN - 4Superfet III , Cut Tape , Reel , ReelSi1 Channel- 30 V , + 30 V82 nCEnhancement SuperFET III
IXFT94N30P3


MOSFET N-Channel: Power MOSFET w/Fast Diode
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IXYS 5
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between Thu. 27 Aug to Mon. 31 Aug
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AUD 16.4179

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94 A300 V36 mOhmsN - Channel 3 V- 55 C+ 150 C1040 WSmd/SmtTO - 268 - 3TubeSi1 Channel20 V102 nCEnhancement Hiperfet
IXFK78N50P3


MOSFET 500V 78A 0.068Ohm PolarP3 Power MOSFET
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IXYS 5
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between Fri. 21 Aug to Thu. 27 Aug
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AUD 20.6448

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78 A500 V68 mOhmsN - Channel 5 V  1.13 kWThrough HoleTO - 264 - 3TubeSi1 Channel30 V147 nC  Hiperfet
STW21N150K5


Transistor: N-MOSFET; unipolar; 1500V; 8.7A; 446W; TO247
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STMicroelectronics 5
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between Fri. 21 Aug to Thu. 27 Aug
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AUD 24.0925

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            mdmesh      
IXFK170N25X3


MOSFET 250V/170A Ultra Junc tion X3-Class MOSFET
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IXYS 5
Ships to you
between Fri. 04 Sep to Wed. 09 Sep
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AUD 10.8731

Multiples of: 1

170 A250 V6.1 mOhmsN - Channel 2.5 V- 55 C+ 150 C960 WThrough HoleTO - 264 - 3TubeSi1 Channel20 V190 nCEnhancement Hiperfet
IXTT110N10L2


MOSFET Linear Extended FBSOA Power MOSFET
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IXYS 5
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between Fri. 04 Sep to Wed. 09 Sep
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AUD 39.7722

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110 A100 V18 mOhmsn - channel 2.5 V- 55 C+ 150 C600 Wsmd/smtTO - 268 - 3Tubesi1 channel10 V260 nCenhancement  
STW70N65DM6


MOSFET N-channel 650 V, 36 mOhm typ 68 A MDmesh DM6 Power MOSFET
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STMicroelectronics 5
Ships to you
between Fri. 04 Sep to Wed. 09 Sep
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AUD 47.2367

Multiples of: 1

                   
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