MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDP045N10A-F102


MOSFET 100V N-CHANNEL POWERTRENCH MOSFET
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ON Semiconductor 54
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between Fri. 04 Sep to Wed. 09 Sep
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AUD 6.1808

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SUM90142E-GE3


MOSFET 200V Vds 20V Vgs TO-263
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Vishay 6
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between Fri. 04 Sep to Wed. 09 Sep
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AUD 6.6466

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90 A200 V12.3 mOhmsN - Channel 2 V- 55 C+ 175 C375 WSmd/SmtTO - 263 - 3TubeSi1 Channel20 V87 nCEnhancement  
ALD810022SCL


MOSFET Quad SAB MOSFET ARRAY VT=2.20V
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Advanced Linear Devices 5
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between Thu. 27 Aug to Mon. 31 Aug
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AUD 5.3194

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80 mA10.6 V-N - Channel 2.22 V0 C+ 70 C500 mWSmd/SmtSOIC - 16TubeSi4 Channel10.6 V-Enhancement  
SI7220DN-T1-E3


MOSFET 60V Vds 20V Vgs PowerPAK 1212-8
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Vishay 5
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between Fri. 04 Sep to Wed. 09 Sep
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AUD 5.9386

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   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8Reel       
SCT3120ALGC11


MOSFET N-Ch 650V SiC 21A 120mOhm TrenchMOS
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ROHM 5
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between Fri. 04 Sep to Wed. 09 Sep
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AUD 6.9124

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21 A650 V120 mOhmsN - Channel 5.6 V- 55 C+ 175 C103 WThrough HoleTO - 247 - 3TubeSic1 Channel22 V38 nCEnhancement  
IPB80N04S2-H4


MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS
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Infineon 5
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between Fri. 04 Sep to Wed. 09 Sep
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AUD 7.7016

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STB32NM50N


MOSFET N-Ch 500V 0.1 Ohm 22A MDmesh II
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STMicroelectronics 5
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between Fri. 04 Sep to Wed. 09 Sep
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AUD 7.7603

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   n - channel     smd/smtD2PAKReel       
2SK4013


Transistor: N-MOSFET; unipolar; 800V; 6A; 45W; TO220FP
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Toshiba 5
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between Fri. 04 Sep to Wed. 09 Sep
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AUD 7.8693

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IPT60R125G7


MOSFET HIGH POWER_NEW
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Infineon 5
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between Fri. 04 Sep to Wed. 09 Sep
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AUD 8.1421

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ALD212900APAL


MOSFET Dual N-Ch EPAD FET Array VGS=0.0V
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Advanced Linear Devices 5
Ships to you
between Thu. 27 Aug to Mon. 31 Aug
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AUD 8.3239

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79 mA10 V14 OhmsN - Channel 10 mV0 C+ 70 C500 mWThrough HolePDIP - 8TubeSi2 Channel10.6 V Depletion  
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