MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTMFS6H800NT1G


MOSFET TRENCH 8 80V NFET POWER MOSFET
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ON Semiconductor 7
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AUD 5.3887
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203 A80 V1.8 mOhmsN - Channel 2 V- 55 C+ 175 C200 WSmd/SmtSO - 8FLCut TapeSi1 Channel20 V85 nCEnhancement  
STP18N65M5


MOSFET N-Ch 650V 0.198 Ohm 15 A MDmesh V
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STMicroelectronics 6
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AUD 4.9761
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   N - Channel     Through HoleTO - 220Tube       
NTPF360N80S3Z


MOSFET SF3 800V 360MOHM TO-220F
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ON Semiconductor 6
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AUD 5.1322
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IXFQ72N20X3


MOSFET DiscMSFT NChUltrJnctn X3Class TO-3P (3)
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IXYS 6
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AUD 7.4597
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           Tube      Hiperfet
IPP60R070CFD7


MOSFET HIGH POWER_NEW
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Infineon 6
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AUD 7.7014
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BTS244ZE3043AKSA2


MOSFET N-Ch 55V 19A TO220-5
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Infineon 6
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AUD 8.639
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19 A55 V13 mOhmsN - Channel 1.6 V- 40 C+ 175 C170 WThrough HoleTO - 220 - 5TubeSi1 Channel20 V85 nCEnhancementAec - Q101 
FDB2614


Transistor: N-MOSFET; unipolar; 200V; 62A; 260W; D2PAK
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ON Semiconductor 6
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AUD 10.7212
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62 A200 V22.9 mOhmsN - Channel 3 V- 55 C+ 150 C260 WSMD/SMTSC - 70 - 3Reel , Cut TapeSi1 Channel- 30 V , 30 V99 nCEnhancement PowerTrench
STHU36N60DM6AG


MOSFETs Automotive-grade N-channel 600 V, 84 mOhm typ., 29 A MDmesh DM6 Power MOSFET
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STMicroelectronics 6
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AUD 13.845
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IXFR30N60P


MOSFET 600V 30A
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IXYS 6
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AUD 14.209
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15 A600 V250 mOhmsn - channel  - 55 C+ 150 C166 Wthrough holeTO - 247 - 3Tubesi1 channel30 V enhancement hiperfet
FDH44N50


Transistor: N-MOSFET; unipolar; 500V; 44A; 750W; TO247
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ON Semiconductor 1
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AUD 9.9461
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44 A500 V120 mOhmsN - Channel 2 V- 55 C+ 175 C750 WThrough HoleTO - 247 - 3TubeSi1 Channel- 30 V , 30 V108 nCEnhancement  
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